Interface phenomena and emerging functionalities in ferroelectric oxide based heterostructures

Yifei Hao, Tianlin Li and Xia Hong

Chem. Commun., 2025, 61, 4924
DOI: 10.1039/D4CC05836D

Negative capacitance based on isomeric polythiophene in action

Devendra Kumar, Rudramani Tiwari, Dipendra Kumar Verma, Shashikant Yadav, Km. Parwati, Rajshree Rai, Pubali Adhikary and S. Krishnamoorthi

Soft Matter, 2024, 20, 7578
DOI: 10.1039/D4SM01075B

Stabilization of negative capacitance in ferroelectric capacitors with and without a metal interlayer

T. Rollo, F. Blanchini, G. Giordano, R. Specogna and D. Esseni

Nanoscale, 2020, 12, 6121
DOI: 10.1039/C9NR09470A

A novel high endurance HZO FeFET with monolayer graphene inserted in the gate oxide

Liang Chen, Runteng Zhu, Xin Gao, Anyu Tong, Hailin Peng, Yanqing Wu, Ru Huang and Kechao Tang

Nanoscale, 2025
DOI: 10.1039/D5NR02579F

Macroscopic and microscopic picture of negative capacitance operation in ferroelectric capacitors

David Esseni and Riccardo Fontanini

Nanoscale, 2021, 13, 9641
DOI: 10.1039/D0NR06886A

Negative Capacitance Transistors

Justin C. Wong and Sayeef Salahuddin

Proc. IEEE, 2019, 107, 49
DOI: 10.1109/JPROC.2018.2884518

Incomplete Dipoles Flipping Produced Near Hysteresis-Free Negative Capacitance Transistors

Jiuren Zhou, Genquan Han, Nuo Xu, Jing Li, Yue Peng, Yan Liu, Jincheng Zhang, Qing-Qing Sun, David Wei Zhang and Yue Hao

IEEE Electron Device Lett., 2019, 40, 329
DOI: 10.1109/LED.2018.2886426

Ferroelectric gate oxides for negative capacitance transistors

Michael Hoffmann and Sayeef Salahuddin

MRS Bulletin, 2021, 46, 930
DOI: 10.1557/s43577-021-00208-y

The role of flexoelectric coupling and chemical strains in the emergence of polar chiral nano-structures

Anna N. Morozovska, Salia Cherifi-Hertel, Eugene A. Eliseev, Victoria V. Khist, Riccardo Hertel and Dean R. Evans

Journal of Applied Physics, 2025, 138
DOI: 10.1063/5.0277483

Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor‐Structure Devices

Zheng‐Dong Luo, Ming‐Min Yang, Yang Liu and Marin Alexe

Advanced Materials, 2021, 33
DOI: 10.1002/adma.202005620

Negative capacitance enables GAA scaling VDD to 0.5 V

Ming-Yen Kao, Sayeef Salahuddin and Chenming Hu

Solid-State Electronics, 2021, 181-182, 108010
DOI: 10.1016/j.sse.2021.108010

A memory window expression to evaluate the endurance of ferroelectric FETs

Nicolò Zagni, Paolo Pavan and Muhammad A. Alam

Applied Physics Letters, 2020, 117
DOI: 10.1063/5.0021081

Optimization of NCFET by Matching Dielectric and Ferroelectric Nonuniformly Along the Channel

Ming-Yen Kao, Yen-Kai Lin, Harshit Agarwal, Yu-Hung Liao, Pragya Kushwaha, Avirup Dasgupta, Sayeef Salahuddin and Chenming Hu

IEEE Electron Device Lett., 2019, 40, 822
DOI: 10.1109/LED.2019.2906314

Intrinsic Nature of Negative Capacitance in Multidomain Hf0.5Zr0.5O2‐Based Ferroelectric/Dielectric Heterostructures

Michael Hoffmann, Mengcheng Gui, Stefan Slesazeck, Riccardo Fontanini, Mattia Segatto, David Esseni and Thomas Mikolajick

Adv Funct Materials, 2022, 32
DOI: 10.1002/adfm.202108494

Ferro-ionic states and domains morphology in HfxZr1−xO2 nanoparticles

Eugene A. Eliseev, Sergei V. Kalinin and Anna N. Morozovska

Journal of Applied Physics, 2025, 137
DOI: 10.1063/5.0243067

Feedback Stabilization of a Negative-Capacitance Ferroelectric and its Application to Improve the f T of a MOSFET

Zhi Cheng Yuan, Prasad S. Gudem, Anirudh Aggarwal, Collin VanEssen, Diego Kienle and Mani Vaidyanathan

IEEE Trans. Electron Devices, 2021, 68, 5101
DOI: 10.1109/TED.2021.3108125

Influence of device architecture on the performance of negative capacitance MFMIS transistors

Fahimul Islam Sakib, Faiyaz Elahi Mullick, Shafat Shahnewaz, Sharnali Islam and Mainul Hossain

Semicond. Sci. Technol., 2020, 35, 025005
DOI: 10.1088/1361-6641/ab5b76

On the validity and applicability of models of negative capacitance and implications for MOS applications

J. A. Kittl, B. Obradovic, D. Reddy, T. Rakshit, R. M. Hatcher and M. S. Rodder

Applied Physics Letters, 2018, 113
DOI: 10.1063/1.5036984

Ferroelectric negative capacitance

Jorge Íñiguez, Pavlo Zubko, Igor Luk’yanchuk and Andrés Cano

Nat Rev Mater, 2019, 4, 243
DOI: 10.1038/s41578-019-0089-0

Potential Enhancement of fT and gₘfT /ID via the Use of NCFETs to Mitigate the Impact of Extrinsic Parasitics

Ji Kai Wang, Collin VanEssen, Thomas Cam, Keith Ferrer, Zhi Cheng Yuan, Prasad S. Gudem, Diego Kienle and Mani Vaidyanathan

IEEE Trans. Electron Devices, 2022, 69, 4153
DOI: 10.1109/TED.2022.3187374

Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device

Sojin Jeong, Sangwoo Han, Ho-Jun Lee, Deokjoon Eom, Gisu Youm, Yejoo Choi, Seungjun Moon, Kyungjin Ahn, Jinju Oh and Changhwan Shin

IEEE Access, 2021, 9, 116953
DOI: 10.1109/ACCESS.2021.3106331

Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization

Anne S Verhulst, Ali Saeidi, Igor Stolichnov, Alireza Alian, Hiroshi Iwai, Nadine Collaert and Adrian M. Ionescu

IEEE Trans. Electron Devices, 2020, 67, 377
DOI: 10.1109/TED.2019.2954585

Compensation Charge Control and Modeling for Reproducing Negative Capacitance Effect of Hafnia Ferroelectric Thin Films

Dante Ahn, Moonyoung Jung, Yoseop Lee, Sungmun Song, Woori Ham, Dongseok Suh and Seung‐Eon Ahn

Adv Materials Inter, 2020, 7
DOI: 10.1002/admi.202001356

Recent research progress of ferroelectric negative capacitance field effect transistors

Jun-Dong Chen, Wei-Hua Han, Chong Yang, Xiao-Song Zhao, Yang-Yan Guo, Xiao-Di Zhang and Fu-Hua Yang

Acta Phys. Sin., 2020, 69, 137701
DOI: 10.7498/aps.69.20200354

Phase field study on the flexoelectric response of dielectric–ferroelectric multilayers

Xiang Huang, Junyu Tao, Zhenxun Tang, Linjie Liu, Fan Zhang, Weijin Chen and Yue Zheng

Journal of Applied Physics, 2023, 134
DOI: 10.1063/5.0153199

Ferri-ionic coupling in CuInP2S6 nanoflakes: Polarization states and controllable negative capacitance

Anna N. Morozovska, Sergei V. Kalinin, Eugene A. Eliseev, Svitlana Kopyl, Yulian M. Vysochanskii and Dean R. Evans

Phys. Rev. Applied, 2024, 22
DOI: 10.1103/PhysRevApplied.22.034059

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Carlotta Gastaldi, Matteo Cavalieri, Ali Saeidi, Eamon O'Connor, Francesco Bellando, Igor Stolichnov and Adrian M. Ionescu

IEEE Trans. Electron Devices, 2022, 69, 2680
DOI: 10.1109/TED.2022.3157579

Numerical modeling of anisotropic ferroelectric materials with hybridizable discontinuous Galerkin methods

Wenyu Lei

Math Methods in App Sciences, 2023, 46, 17522
DOI: 10.1002/mma.9514

Domain Engineering the Flexoelectric Response of BaTiO3–SrTiO3 Binary Films: A Phase Field Study

Junyu Tao, Fan Zhang, Jianyuan Zhang, Weijin Chen and Yue Zheng

Acta Mech. Solida Sin., 2024, 37, 590
DOI: 10.1007/s10338-024-00471-x

Direct Measurement of Transient Charging and Dipole Alignment Speed in Ferroelectric Hf0.5Zr0.5O2 Gate Dielectric Using Graphene FETs

Hyeon Jun Hwang, Sang Kyung Lee, Seung Mo Kim and Byoung Hun Lee

Adv Elect Materials, 2021, 7
DOI: 10.1002/aelm.202100145

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf0.5Zr0.5O2 Thin Films

Yuchen Wang, Si Liu, Zhen Luo, Hui Gan, He Wang, Jiachen Li, Xinzhe Du, Haoyu Zhao, Shengchun Shen, Yuewei Yin and Xiaoguang Li

ACS Appl. Mater. Interfaces, 2023, 15, 42764
DOI: 10.1021/acsami.3c08163

Observability of negative capacitance of a ferroelectric film: Theoretical predictions

Eugene A. Eliseev, Mykola E. Yelisieiev, Sergei V. Kalinin and Anna N. Morozovska

Phys. Rev. B, 2022, 105
DOI: 10.1103/PhysRevB.105.174110

Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs

Yuh-Chen Lin, Felicia McGuire, Steven Noyce, Nicholas Williams, Zhihui Cheng, Joseph Andrews and Aaron D. Franklin

IEEE J. Electron Devices Soc., 2019, 7, 645
DOI: 10.1109/JEDS.2019.2922441

The ferroelectric field-effect transistor with negative capacitance

I. Luk’yanchuk, A. Razumnaya, A. Sené, Y. Tikhonov and V. M. Vinokur

npj Comput Mater, 2022, 8
DOI: 10.1038/s41524-022-00738-2

Physics and Modeling of Multidomain FeFET With Domain Wall-Induced Negative Capacitance

Nilesh Pandey and Yogesh Singh Chauhan

IEEE Trans. Electron Devices, 2022, 69, 4659
DOI: 10.1109/TED.2022.3179462

Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field‐Effect Transistors

Anna N. Morozovska, Eugene A. Eliseev, Yulian M. Vysochanskii, Sergei V. Kalinin and Maksym V. Strikha

Adv Elect Materials, 2025, 11
DOI: 10.1002/aelm.202400495

Theoretical Study of Negative Capacitance FinFET With Quasi-Antiferroelectric Material

Fan Zhang, Yue Peng, Xinran Deng, Jiali Huo, Yan Liu, Genquan Han, Zhenhua Wu, Huaxiang Yin and Yue Hao

IEEE Trans. Electron Devices, 2021, 68, 3074
DOI: 10.1109/TED.2021.3074352

Insights into unconventional behaviour of negative capacitance transistor through a physics-based analytical model

Sandeep Semwal and Abhinav Kranti

Semicond. Sci. Technol., 2021, 36, 095018
DOI: 10.1088/1361-6641/ac123d

Comparative Evaluation of Ferroelectric Negative Capacitance MFMIS and MFIS Transistors for Analog/Radio-Frequency Applications

Tian-Tong Cheng, Qiang Li, Yu-Xi Yang and Zhi-Wei Zheng

IEEE Trans. Nanotechnology, 2024, 23, 317
DOI: 10.1109/TNANO.2024.3384968

Unveiling the double-well energy landscape in a ferroelectric layer

Michael Hoffmann, Franz P. G. Fengler, Melanie Herzig, Terence Mittmann, Benjamin Max, Uwe Schroeder, Raluca Negrea, Pintilie Lucian, Stefan Slesazeck and Thomas Mikolajick

Nature, 2019, 565, 464
DOI: 10.1038/s41586-018-0854-z

Linearity Distortion & Thermal Stability Analysis of Negative Capacitance based Cylindrical Junction-less Transistors (NC-CyJLT)

Manish Kumar Rai, Abhinav Gupta and Sanjeev Rai

Silicon, 2022, 14, 9871
DOI: 10.1007/s12633-022-01662-2

Observing suppressed polarization in flexible ferroelectric negative capacitance field effect transistors

Chuanlai Ren, Liyufen Dai, Congbing Tan, Guangtong Yuan, Ke Qu, Jinbin Wang, Xiangli Zhong, Mingqiang Huang, Jiyan Dai, Gaokuo Zhong and Jiangyu Li

Journal of Materiomics, 2024, 10, 762
DOI: 10.1016/j.jmat.2023.09.008

What’s next for negative capacitance electronics?

Michael Hoffmann, Stefan Slesazeck, Uwe Schroeder and Thomas Mikolajick

Nat Electron, 2020, 3, 504
DOI: 10.1038/s41928-020-00474-9

Impact of Domain Wall Motion on the Memory Window in a Multidomain Ferroelectric FET

Nilesh Pandey and Yogesh Singh Chauhan

IEEE Electron Device Lett., 2022, 43, 1854
DOI: 10.1109/LED.2022.3207221

Next generation ferroelectric materials for semiconductor process integration and their applications

T. Mikolajick, S. Slesazeck, H. Mulaosmanovic, M. H. Park, S. Fichtner, P. D. Lomenzo, M. Hoffmann and U. Schroeder

Journal of Applied Physics, 2021, 129
DOI: 10.1063/5.0037617

Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET

Yu-Hung Liao, Daewoong Kwon, Suraj Cheema, Nirmaan Shanker, Ava J. Tan, Ming-Yen Kao, Li-Chen Wang, Chenming Hu and Sayeef Salahuddin

IEEE Trans. Electron Devices, 2021, 68, 1346
DOI: 10.1109/TED.2021.3049763

Performance Evaluation of Negative-Capacitance Fin-Type Field Effect Transistor-Based Static Random-Access Memory with Mixed-Mode Simulation

Xianlong Chen, Weifeng Lü, Bo Liu, Tiejun Du and Mi Lin

Journal of Nanoelectronics and Optoelectronics, 2021, 16, 414
DOI: 10.1166/jno.2021.2964

Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETs

Hyeon Jun Hwang, Seung Mo Kim and Byoung Hun Lee

Adv Elect Materials, 2024, 10
DOI: 10.1002/aelm.202300511

Emerging Fluorite-Structured Antiferroelectrics and Their Semiconductor Applications

Geun Hyeong Park, Dong Hyun Lee, Hyojun Choi, Taegyu Kwon, Yong Hyeon Cho, Se Hyun Kim and Min Hyuk Park

ACS Appl. Electron. Mater., 2023, 5, 642
DOI: 10.1021/acsaelm.2c01615

Compact model for MFIS-NCFETs considering deep-level interface trap states

Xin Liu, Shaoman Peng, Heung Nung Lau, Xincheng Huang and Wanling Deng

J Comput Electron, 2024, 23, 945
DOI: 10.1007/s10825-024-02194-1

5 nm Ultrathin Crystalline Ferroelectric P(VDF‐TrFE)‐Brush Tuned for Hysteresis‐Free Sub 60 mV dec−1 Negative‐Capacitance Transistors

Hyunmin Cho, Hye‐Jin Jin, Sol Lee, Seungbae Jeon, Yongjae Cho, Sam Park, Myeongjin Jang, Livia Janice Widiapradja, Du Yeol Ryu, Ji Hoon Park, Kwanpyo Kim and Seongil Im

Advanced Materials, 2023, 35
DOI: 10.1002/adma.202300478

Imprinted Antiferroelectric With Low Damage Process for High Performance Negative Capacitance NAND Flash Memory

Sangho Lee, Giuk Kim, Yunseok Nam, Yeongseok Jeong, Taeho Kim, Hunbeom Shin, Sangmok Lee, Jinho Ahn and Sanghun Jeon

IEEE Electron Device Lett., 2025, 46, 572
DOI: 10.1109/LED.2025.3538562

3D Ferroelectric Phase Field Simulations of Polycrystalline Multi‐Phase Hafnia and Zirconia Based Ultra‐Thin Films

Prabhat Kumar, Michael Hoffmann, Andy Nonaka, Sayeef Salahuddin and Zhi (Jackie) Yao

Adv Elect Materials, 2024, 10
DOI: 10.1002/aelm.202400085

Is negative capacitance FET a steep-slope logic switch?

Wei Cao and Kaustav Banerjee

Nat Commun, 2020, 11
DOI: 10.1038/s41467-019-13797-9

Multiple factors of regulation for transient negative capacitance in PbZr(1−x)Ti(x)O3 ferroelectric thin films

Hai-Ze Cao, Yong-Guang Xiao, Ning-Jie Ma, Li-Sha Yang, Yong Jiang, Ke Xiong, Gang Li, Jun Ouyang and Ming-Hua Tang

Semicond. Sci. Technol., 2024, 39, 025003
DOI: 10.1088/1361-6641/ad1ba8

Possible electrochemical origin of ferroelectricity in HfO2 thin films

Maya D. Glinchuk, Anna N. Morozovska, Anna Lukowiak, Wiesław Stręk, Maxim V. Silibin, Dmitry V. Karpinsky, Yunseok Kim and Sergei V. Kalinin

Journal of Alloys and Compounds, 2020, 830, 153628
DOI: 10.1016/j.jallcom.2019.153628

Interfacial effects and negative capacitance state in P (VDF-TrFE) films with BaTiO 3 nanoparticles

Oleksii V. Bereznykov, Oleksandr S. Pylypchuk, Victor I. Styopkin, Serhii Е. Ivanchenko, Denis О. Stetsenko, Eugene А. Eliseev, Zdravko Kutnjak, Vladimir N. Poroshin, Anna N. Morozovska and Nicholas V. Morozovsky

Composite Interfaces, 2025, 1
DOI: 10.1080/09276440.2025.2538943

Progress and future prospects of negative capacitance electronics: A materials perspective

Michael Hoffmann, Stefan Slesazeck and Thomas Mikolajick

APL Materials, 2021, 9
DOI: 10.1063/5.0032954

Assessing RF/AC Performance and Linearity Analysis of NCFET in CMOS-Compatible Thin-Body FDSOI

Siddhanta Roy, Pralay Chakrabarty and Roy Paily

IEEE Trans. Electron Devices, 2022, 69, 475
DOI: 10.1109/TED.2021.3136151

Homogeneous versus Inhomogeneous Polarization Switching in PZT Thin Films: Impact of the Structural Quality and Correlation to the Negative Capacitance Effect

Lucian Pintilie, Georgia Andra Boni, Cristina Florentina Chirila, Viorica Stancu, Lucian Trupina, Cosmin Marian Istrate, Cristian Radu and Ioana Pintilie

Nanomaterials, 2021, 11, 2124
DOI: 10.3390/nano11082124

An LGD model with extrinsic nucleations for polarization dynamics in ferroelectric materials and devices

Mattia Segatto, Daniel Lizzit and David Esseni

Sci Rep, 2025, 15
DOI: 10.1038/s41598-025-03469-8

Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation

Pengying Chang, Gang Du and Xiaoyan Liu

Sci. China Inf. Sci., 2021, 64
DOI: 10.1007/s11432-020-3005-8

Mechanical manipulation of the transient negative capacitance effect in resistor-ferroelectric capacitor circuit

Qian He, Weijin Chen, Xin Luo and Yue Zheng

Acta Mech. Sin., 2025, 41
DOI: 10.1007/s10409-024-23221-x

Enhanced transient negative capacitance during inhomogeneous ferroelectric switching

Bin Xu, Sergey Prosandeev, Charles Paillard and L. Bellaiche

Phys. Rev. B, 2020, 101
DOI: 10.1103/PhysRevB.101.180101

Constructing an Overall Static Negative Capacitance Effect via Energy Landscape Designing

Leilei Qiao, Cheng Song, Qian Wang, Yongjian Zhou and Feng Pan

Adv Elect Materials, 2022, 8
DOI: 10.1002/aelm.202200644

Recent progress on negative capacitance tunnel FET for low-power applications: Device perspective

Abhishek Kumar Upadhyay, Shiromani Balmukund Rahi, Shubham Tayal and Young Suh Song

Microelectronics Journal, 2022, 129, 105583
DOI: 10.1016/j.mejo.2022.105583

Negative capacitance devices: sensitivity analyses of the developed TCAD ferroelectric model for HZO

A. Morozzi, M. Hoffmann, R. Mulargia, S. Slesazeck and E. Robutti

J. Inst., 2022, 17, C01048
DOI: 10.1088/1748-0221/17/01/C01048

Influence of chemical strains on the electrocaloric response, polarization morphology, tetragonality, and negative-capacitance effect of ferroelectric core-shell nanorods and nanowires

Anna N. Morozovska, Eugene A. Eliseev, Olha A. Kovalenko and Dean R. Evans

Phys. Rev. Applied, 2024, 21
DOI: 10.1103/PhysRevApplied.21.054035

Origin of Ferroelectricity and Multiferroicity in Binary Oxide Thin Films

Maya D. Glinchuk, Anna N. Morozovska and Lesya P. Yurchenko

IEEE Trans. Ultrason., Ferroelect., Freq. Contr., 2021, 68, 273
DOI: 10.1109/TUFFC.2020.2988361

The Concept of Negative Capacitance in Ionically Conductive Van der Waals Ferroelectrics

Sabine M. Neumayer, Lei Tao, Andrew O'Hara, Michael A. Susner, Michael A. McGuire, Petro Maksymovych, Sokrates T. Pantelides and Nina Balke

Advanced Energy Materials, 2020, 10
DOI: 10.1002/aenm.202001726

Harnessing ferroelectric domains for negative capacitance

I. Luk’yanchuk, Y. Tikhonov, A. Sené, A. Razumnaya and V. M. Vinokur

Commun Phys, 2019, 2
DOI: 10.1038/s42005-019-0121-0

Tuning Negative Capacitance in PbZr0.2Ti0.8O3/SrTiO3 Heterostructures via Layer Thickness Ratio

Yifei Hao, Tianlin Li, Yu Yun, Xin Li, Xuegang Chen, Jingfeng Song, Zahra Ahmadi, Jeffrey E. Shield, Xiaoshan Xu and Xia Hong

Phys. Rev. Applied, 2021, 16
DOI: 10.1103/PhysRevApplied.16.034004

Emergent Inhomogeneity and Nonlocality in a Graphene Field-Effect Transistor on a Near-Parallel Moiré Superlattice of Transition Metal Dichalcogenides

Shaili Sett, Rahul Debnath, Arup Singha, Shinjan Mandal, K. M. Jyothsna, Monika Bhakar, Kenji Watanabe, Takashi Taniguchi, Varun Raghunathan, Goutam Sheet, Manish Jain and Arindam Ghosh

Nano Lett., 2024, 24, 9245
DOI: 10.1021/acs.nanolett.4c01755

Negative capacitance in ferroelectric heterostructures

Yuchu Qin and Jiangyu Li

Phys. Rev. B, 2024, 110
DOI: 10.1103/PhysRevB.110.134101

Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer

Chiara Rossi, Daniel Lizzit and David Esseni

IEEE Access, 2025, 13, 68525
DOI: 10.1109/ACCESS.2025.3561255

Steady state negative capacitance in p-n ferroelectric junctions

Andra Georgia Boni, Cristina Florentina Chirila, Lucian Dragos Filip, Mihaela Ioana Botea, Cristian Radu, Dana Georgeta Popescu, Marius Adrian Husanu, Luminita Hrib, Lucian Trupina, Ioana Pintilie and Lucian Pintilie

Acta Materialia, 2025, 121177
DOI: 10.1016/j.actamat.2025.121177

Polarization Switching and Negative Capacitance in Epitaxial PbZr0.2Ti0.8O3 Thin Films

Lucian Pintilie, Georgia Andra Boni, Cristina Chirila, Luminita Hrib, Lucian Trupina, Lucian Dragos Filip and Ioana Pintilie

Phys. Rev. Applied, 2020, 14
DOI: 10.1103/PhysRevApplied.14.014080

Negative capacitance effects in ferroelectric heterostructures: A theoretical perspective

Atanu K. Saha and Sumeet K. Gupta

Journal of Applied Physics, 2021, 129
DOI: 10.1063/5.0038971

Analytical modeling of architecture dependent atypical scaling trends in metal–Hf0.5Zr0.5O2–metal-SiO2–Si negative capacitance transistors

Sandeep Semwal and Abhinav Kranti

Semicond. Sci. Technol., 2023, 38, 095011
DOI: 10.1088/1361-6641/aced69

Ultrathin Sub-5-nm Hf₁₋ₓZrₓO₂ for a Stacked Gate-all-Around Nanowire Ferroelectric FET With Internal Metal Gate

Shen-Yang Lee, Chia-Chin Lee, Yi-Shan Kuo, Shou-Wei Li and Tien-Sheng Chao

IEEE J. Electron Devices Soc., 2021, 9, 236
DOI: 10.1109/JEDS.2021.3056438

Self-Consistent LCAO Based DFT Analysis of High-k Spacers and its Assessment on Gate-Stacked NCFET for Improved Device-Circuit Performance

Rashi Mann and Rishu Chaujar

Silicon, 2024, 16, 5185
DOI: 10.1007/s12633-024-03074-w

Current Prospects and Challenges in Negative-Capacitance Field-Effect Transistors

Md. Sherajul Islam, Abdullah Al Mamun Mazumder, Changjian Zhou, Catherine Stampfl, Jeongwon Park and Cary Y. Yang

IEEE J. Electron Devices Soc., 2023, 11, 235
DOI: 10.1109/JEDS.2023.3267081

Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials

Ruo‐Si Chen and Yuerui Lu

Small, 2024, 20
DOI: 10.1002/smll.202304445

Modeling of Negative Capacitance in Ferroelectric Thin Films

Hyeon Woo Park, Jangho Roh, Yong Bin Lee and Cheol Seong Hwang

Advanced Materials, 2019, 31
DOI: 10.1002/adma.201805266

Gate-induced drain leakage (GIDL) in MFMIS and MFIS negative capacitance FinFETs

Jinhong Min, Gihun Choe and Changhwan Shin

Current Applied Physics, 2020, 20, 1222
DOI: 10.1016/j.cap.2020.08.008

Design of MoS2 NCFET Featuring Subthermodynamic Limit SS, No More Than 5 mV/V DIBR, and 0.8% Threshold Voltage Variation at 10-nm Channel Length: Modeling and Analysis

Sanket Mitra, Chandrima Mondal and Abhijit Biswas

IEEE Trans. Electron Devices, 2025, 72, 1476
DOI: 10.1109/TED.2025.3529407

Junction Design and Complementary Capacitance Matching for NCFET CMOS Logic

Reinaldo A. Vega, Takashi Ando and Timothy M. Philip

IEEE J. Electron Devices Soc., 2021, 9, 691
DOI: 10.1109/JEDS.2021.3095923

Negative Capacitance for Electrostatic Supercapacitors

Michael Hoffmann, Franz Paul Gustav Fengler, Benjamin Max, Uwe Schroeder, Stefan Slesazeck and Thomas Mikolajick

Advanced Energy Materials, 2019, 9
DOI: 10.1002/aenm.201901154

Thermodynamic equilibrium theory revealing increased hysteresis in ferroelectric field-effect transistors with free charge accumulation

Jasper Bizindavyi, Anne S. Verhulst, Bart Sorée and William G. Vandenberghe

Commun Phys, 2021, 4
DOI: 10.1038/s42005-021-00583-7

Double S‐Shaped Polarization – Voltage Curve and Negative Capacitance from Al2O3‐Hf0.5Zr0.5O2‐Al2O3Triple‐Layer Structure

Hyeon Woo Park, Minsik Oh, In Soo Lee, Seungyong Byun, Yoon Ho Jang, Yong Bin Lee, Beom Yong Kim, Suk Hyun Lee, Seung Kyu Ryoo, Doosup Shim, Jae Hoon Lee, Hani Kim, Kyung Do Kim and Cheol Seong Hwang

Adv Funct Materials, 2023, 33
DOI: 10.1002/adfm.202206637

Super-Nernstian WSe2/MoS2 Heterostructure ISFET Combining Negative Capacitance and Charge Screening Effects

Sooraj Sanjay, Fahimul Islam Sakib, Mainul Hossain and Navakanta Bhat

IEEE Sensors J., 2023, 23, 12526
DOI: 10.1109/JSEN.2023.3270189

Negative Capacitance from the Inhomogenous Stray Field in a Ferroelectric–Dielectric Structure

Hyeon Woo Park, Minsik Oh and Cheol Seong Hwang

Adv Funct Materials, 2022, 32
DOI: 10.1002/adfm.202200389

Impact of Negative Capacitance Junctionless Nanowire (NCJLNW) MOSFET on Ring Oscillator Design and Analysis

Manish Kumar Rai and Sanjeev Rai

IJITEE, 2023, 12, 1
DOI: 10.35940/ijitee.D9464.0312423

Analysis and Modeling of Inner Fringing Field Effect on Negative Capacitance FinFETs

Yen-Kai Lin, Harshit Agarwal, Pragya Kushwaha, Ming-Yen Kao, Yu-Hung Liao, Korok Chatterjee, Sayeef Salahuddin and Chenming Hu

IEEE Trans. Electron Devices, 2019, 66, 2023
DOI: 10.1109/TED.2019.2899810

Reliability physics of ferroelectric/negative capacitance transistors for memory/logic applications: An integrative perspective

Nicolò Zagni and Muhammad Ashraful Alam

Journal of Materials Research, 2021, 36, 4908
DOI: 10.1557/s43578-021-00420-1

Beyond Moore's law – A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics

Sresta Valasa, Venkata Ramakrishna Kotha and Narendar Vadthiya

Materials Science in Semiconductor Processing, 2024, 173, 108116
DOI: 10.1016/j.mssp.2024.108116

Insights Into Design Optimization of Negative Capacitance Complementary-FET (CFET)

Sandeep Semwal and Pin Su

IEEE J. Electron Devices Soc., 2025, 13, 154
DOI: 10.1109/JEDS.2025.3546314

Scale-free ferroelectricity induced by flat phonon bands in HfO 2

Hyun-Jae Lee, Minseong Lee, Kyoungjun Lee, Jinhyeong Jo, Hyemi Yang, Yungyeom Kim, Seung Chul Chae, Umesh Waghmare and Jun Hee Lee

Science, 2020, 369, 1343
DOI: 10.1126/science.aba0067

Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in a Ferroelectric/Dielectric Stack

Mengwei Si, Xiao Lyu and Peide D. Ye

ACS Appl. Electron. Mater., 2019, 1, 745
DOI: 10.1021/acsaelm.9b00092

van der Waals Hybrids for Ferroelectric Device Application

Shaili Sett, Tathagata Paul and Arindam Ghosh

Annual Review of Materials Research, 2025, 55, 359
DOI: 10.1146/annurev-matsci-080323-034918

Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model

Taegeon Kim and Changhwan Shin

Electronics, 2020, 9, 2141
DOI: 10.3390/electronics9122141

RF Performance Projections of Negative-Capacitance FETs: fT , f max, and gmfT/ID

Ji Kai Wang, Prasad S. Gudem, Thomas Cam, Zhi Cheng Yuan, Michael Wong, Kyle D. Holland, Diego Kienle and Mani Vaidyanathan

IEEE Trans. Electron Devices, 2020, 67, 3442
DOI: 10.1109/TED.2020.3001248

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

Yuanyuan Zhang, Xiaoqing Sun, Junshuai Chai, Hao Xu, Xueli Ma, Jinjuan Xiang, Kai Han, Xiaolei Wang, Wenwu Wang and Tianchun Ye

Applied Physics Letters, 2021, 119
DOI: 10.1063/5.0039246

Unveiling negative capacitance in ferroelectric heterostructures: A 3D energy landscape perspective

Bo Li, Xingwang Zhang, Dianchen Zhu, Huabo Yang, Xueze Wang, Ji Jiang, Yuyang Di, Ling Zhang, Jinliang Wu and Zhigang Yin

Journal of Applied Physics, 2025, 137
DOI: 10.1063/5.0265986

Whither Steady-State Negative Capacitance of a Ferroelectric Film?

Eugene A. Eliseev, Mykola E. Yelisieiev, Sergei V. Kalinin and Anna N. Morozovska

SSRN Journal, 2022
DOI: 10.2139/ssrn.4001343

Conditions for Domain-Free Negative Capacitance

Prasanna Venkatesan Ravindran, Priyankka Gundlapudi Ravikumar and Asif Islam Khan

IEEE Trans. Electron Devices, 2023, 70, 4493
DOI: 10.1109/TED.2023.3278617

On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region

Chengji Jin, Takuya Saraya, Toshiro Hiramoto and Masaharu Kobayashi

IEEE J. Electron Devices Soc., 2019, 7, 368
DOI: 10.1109/JEDS.2019.2899727

Monte Carlo Simulation of Switching Dynamics in Polycrystalline Ferroelectric Capacitors

Cristobal Alessandri, Pratyush Pandey, Angel Abusleme and Alan Seabaugh

IEEE Trans. Electron Devices, 2019, 66, 3527
DOI: 10.1109/TED.2019.2922268

Spacer Engineering in Negative Capacitance FinFETs

Yen-Kai Lin, Harshit Agarwal, Ming-Yen Kao, Jiuren Zhou, Yu-Hung Liao, Avirup Dasgupta, Pragya Kushwaha, Sayeef Salahuddin and Chenming Hu

IEEE Electron Device Lett., 2019, 40, 1009
DOI: 10.1109/LED.2019.2911104

Improved Temperature Resilience and Device Performance of Negative Capacitance Reconfigurable Field Effect Transistors

Priyanka Pandey and Harsupreet Kaur

IEEE Trans. Electron Devices, 2020, 67, 738
DOI: 10.1109/TED.2019.2961876

Ovonic threshold switching device and its application to logic gate function and steep slope in field effect transistors

Yufei Wang, Qi Yuan, Nian He, Yanmei Sun and Dianzhong Wen

Surfaces and Interfaces, 2022, 30, 101895
DOI: 10.1016/j.surfin.2022.101895

Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Xiuyan Li and Akira Toriumi

Nat Commun, 2020, 11
DOI: 10.1038/s41467-020-15753-4

Short-channel robustness from negative capacitance in 2D NC-FETs

Yuh-Chen Lin, G. Bruce Rayner, Jorge Cardenas and Aaron D. Franklin

Applied Physics Letters, 2021, 118
DOI: 10.1063/5.0030555

Design Space of Negative Capacitance in FETs

Amin Rassekh, Farzan Jazaeri and Jean-Michel Sallese

IEEE Trans. Nanotechnology, 2022, 21, 236
DOI: 10.1109/TNANO.2022.3174471

Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review

Laixiang Qin, Chunlai Li, Yiqun Wei, Guoqing Hu, Jingbiao Chen, Yi Li, Caixia Du, Zhangwei Xu, Xiumei Wang and Jin He

IEEE Access, 2023, 11, 14028
DOI: 10.1109/ACCESS.2023.3243697

Metal–Ferroelectric–Semiconductor Tunnel Junction: Essential Physics and Design Explorations

Ning Feng, Hao Li, Baokang Peng, Fangxing Zhang, Puyang Cai, Lining Zhang, Runsheng Wang and Ru Huang

IEEE Trans. Electron Devices, 2023, 70, 3382
DOI: 10.1109/TED.2023.3269400