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Citations to this article as recorded by CrossRef and RSC Journals (5 citations).

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Analysis of Interface Phenomena for High-Performance Dual-Stacked Oxide Thin-Film Transistors via Equivalent Circuit Modeling
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DOI: 10.1021/acsami.1c17351

A review of doped metal oxide semiconductors in the stability of thin film transistors
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Journal of Alloys and Compounds, 2025, 1010, 177434
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