Issue 1, 2020

Improvement in hole transporting ability and device performance of quantum dot light emitting diodes

Abstract

In this research, we demonstrate a novel approach to improve the device performance of quantum dot light emitting diodes (QLEDs) by blending an additive BYK-P105 with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as the hole transport layer. In addition, for the first time, polyethylenimine ethoxylated (PEIE)-modified zinc oxide nanoparticles (ZnO NPs) as the electron transport layer were applied in regular-type QLEDs for achieving high device efficiency. A very high brightness of 139 909 cd m−2 and current efficiency of 27.2 cd A−1 were obtained for the optimized device with the configuration of ITO/PEDOT:PSS + BYK-P105/PVK/CdSe QDs/ZnO NPs/PEIE/LiF/Al that shows promising use in light-emitting applications.

Graphical abstract: Improvement in hole transporting ability and device performance of quantum dot light emitting diodes

Supplementary files

Article information

Article type
Paper
Submitted
02 oct. 2019
Accepted
21 nov. 2019
First published
21 nov. 2019
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2020,2, 401-407

Improvement in hole transporting ability and device performance of quantum dot light emitting diodes

P. Chiu and S. Yang, Nanoscale Adv., 2020, 2, 401 DOI: 10.1039/C9NA00618D

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