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Correction: Facile synthesis of silicon quantum dots with photoluminescence in the near-ultraviolet to violet region via wet oxidation

Yizhou He a, Qianxi Hao a, Chi Zhang a, Qi Wang a, Wenxin Zeng a, Jiamin Yu b, Xue Yang *b, Shaorong Li a, Xiaowei Guo *ac and Serguei K. Lazarouk d
aSchool of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China. E-mail: gxw@uestc.edu.cn
bChina National Tobacco Corporation Sichuan Company, Chengdu, 610041, China. E-mail: 280055419@qq.com
cYangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
dBelarusian State University of Informatics and Radioelectronics, P. Browka 6, Minsk 220013, Belarus

Received 27th November 2024 , Accepted 27th November 2024

First published on 12th December 2024


Abstract

Correction for ‘Facile synthesis of silicon quantum dots with photoluminescence in the near-ultraviolet to violet region via wet oxidation’ by Yizhou He et al., J. Mater. Chem. C, 2024, https://doi.org/10.1039/d4tc02095b.


The authors regret errors in Fig. 1 of the published article: “1. Thermal pyrolysis under argon” should read “1. Hydrolysis–condensation under argon”; in addition, “PH = 3” should read “pH = 3”. In Fig. 9 “(2) Nonrecombination by Dangling Bonds” should read “(2) Nonradiative Recombination by Dangling Bonds”. These errors do not impact any of the conclusions of the article. The corrected versions of Fig. 1 and Fig. 9 are shown here:
image file: d4tc90203c-f1.tif
Fig. 1 A schematic diagram of the synthesis routes for NIR-emitting and NUVV-emitting SiQDs.

image file: d4tc90203c-f9.tif
Fig. 2 A schematic diagram of the emission mechanisms of NUVV-QDs.

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.


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