Issue 38, 2024

Type-II WS2/AsP van der Waals heterojunctions with high rectification ratio and high detectivity

Abstract

Photodetectors based on two-dimensional materials have attracted significant attention due to their unique structure and outstanding optoelectronic properties. However, large dark current and extended response time have become bottlenecks for further practical application. In this work, a WS2/AsP van der Waals heterojunction (vdWHs) with a type-II band structure has been fabricated. The built-in electric field at the interface can effectively suppress dark currents and separate photo-generated charge carriers, enhancing photoelectric characteristics. At room temperature, the device exhibits a switching ratio of 107 and a rectification ratio of 105. Under a 532 nm laser illumination, the photodetector presents outstanding characteristics: the detectivity exceeds 1.72 × 1013 jones, the responsivity achieves approximately 14.6 A W−1, the external quantum efficiency reaches up to 4120%, and the response time is in the millisecond range. Our results indicate that WS2/AsP heterojunctions hold promising prospects for future optoelectronic applications.

Graphical abstract: Type-II WS2/AsP van der Waals heterojunctions with high rectification ratio and high detectivity

Supplementary files

Article information

Article type
Paper
Submitted
28 Mezh. 2024
Accepted
09 Eost 2024
First published
10 Eost 2024

J. Mater. Chem. C, 2024,12, 15454-15462

Type-II WS2/AsP van der Waals heterojunctions with high rectification ratio and high detectivity

R. Jia, T. Guo, Y. Wang, Y. Lin, C. Zhu, A. Farhan, J. Xu, B. Ruan, A. Zhang, X. Chen, Z. Li, X. Song and H. Zeng, J. Mater. Chem. C, 2024, 12, 15454 DOI: 10.1039/D4TC02728K

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