Issue 47, 2023

Deciphering I–V characteristics in molecular electronics with the benefit of an analytical model

Abstract

We share our perspective that a simple analytical model for electron tunneling in molecular junctions can greatly aid quantitative analysis of experimental data in molecular electronics. In particular, the single-level model (SLM), derived from first principles, provides a precise prediction for the current–voltage (I–V) characteristics in terms of key electronic structure parameters, which in turn depend on the molecular and contact architecture. SLM analysis thus facilitates understanding of structure–property relationships and provides metrics that can be compared across different types of tunnel junctions, as we illustrate with several examples.

Graphical abstract: Deciphering I–V characteristics in molecular electronics with the benefit of an analytical model

Article information

Article type
Perspective
Submitted
13 Eost 2023
Accepted
14 Du 2023
First published
14 Du 2023

Phys. Chem. Chem. Phys., 2023,25, 32305-32316

Deciphering I–V characteristics in molecular electronics with the benefit of an analytical model

D. Taherinia and C. D. Frisbie, Phys. Chem. Chem. Phys., 2023, 25, 32305 DOI: 10.1039/D3CP03877G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements