Growth mechanism of helical γ-Dy2S3 single crystals

R. E. Nikolaev; V. S. Sulyaeva; A. V. Alekseev; A. S. Sukhikh; E. V. Polyakova; T. A. Pomelova; T. Kuzuya; S. Hirai; B. Tran Nhu

doi:10.1039/D0CE01750G

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Growth mechanism of helical γ-Dy₂S₃ single crystals†

R. E. Nikolaev,

*^a V. S. Sulyaeva,

^a A. V. Alekseev,^a A. S. Sukhikh,^a E. V. Polyakova,

^a T. A. Pomelova,

^a T. Kuzuya,^b S. Hirai^b and B. Tran Nhu^b

Author affiliations

* Corresponding authors

^a Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090, Russia

^b Department of Materials Science and Engineering, Muroran Institute of Technology, Muroran 050-8585, Japan

Abstract

Unusual helical single crystals of γ-Dy₂S₃ were grown from solution by SnS evaporation, and their growth mechanism was investigated. The helical growth of γ-Dy₂S₃ single crystals is driven by axial screw dislocations, and the crystals grow via the vapor–solid–solid mechanism in the presence of a three-phase interface. Dy₂S₃ transfers into the vapor phase through a nonequilibrium process owing to simultaneous evaporation of Dy₂S₃ and SnS. The capture of a nonvolatile component during evaporation is common for solutions comprising volatile and nonvolatile components.

This article is part of the themed collection: Crystal Growth

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Article information

DOI: https://doi.org/10.1039/D0CE01750G
Article type: Communication
Submitted: 02 Ker. 2020
Accepted: 23 Gen. 2021
First published: 25 Gen. 2021

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CrystEngComm, 2021,23, 2196-2201

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Growth mechanism of helical γ-Dy₂S₃ single crystals

R. E. Nikolaev, V. S. Sulyaeva, A. V. Alekseev, A. S. Sukhikh, E. V. Polyakova, T. A. Pomelova, T. Kuzuya, S. Hirai and B. Tran Nhu, CrystEngComm, 2021, 23, 2196 DOI: 10.1039/D0CE01750G

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