Issue 33, 2024

Dual narrowband photodetectors based on halide perovskite single crystal heterojunctions with solution-processed epitaxial growth

Abstract

Dual-band photodetectors (PDs), which can sense two specific bands simultaneously or alternately, have great applications in spectral analysis, imaging, optical communication, and so on. However, some studies on dual-band PDs are mostly limited by drawbacks such as high cost, fixed dual-band range, and lattice mismatches between interfaces. Herein, we propose organic–inorganic halide perovskite single crystal heterojunctions (PSCHs) for dual-band detection via solution-processed epitaxial growth, with a structure of bismuth doped MAPbCl3/intrinsic MAPbBrxCl3−x/bismuth doped MAPbIyBr3−y/intrinsic MAPbIzBr3−z (where x, y, and z are between 0 and 1). The peak position and the full-width at half maximum (FWHM) value of dual-band PDs can be adjusted by changing the proportion of halide in the perovskite single crystal layers in the device, achieving different dual-band spectral response ranges. Eventually, a device exhibits two farthest peaks at 465 nm and 820 nm of visible (Vis)/near-infrared (NIR) range with the corresponding FWHM values of 22.6 nm and 19.4 nm under 2 V. The PSCH-based device can be called dual narrowband PD exhibiting good stability and a response speed of hundreds of microseconds, attributed to the small lattice mismatch and heterostructure. It also shows a high spectral rejection ratio (∼360). In conclusion, this article proposes an approach for customizing dual narrowband PDs with tunable spectral response ranges based on solution-processed epitaxial growth.

Graphical abstract: Dual narrowband photodetectors based on halide perovskite single crystal heterojunctions with solution-processed epitaxial growth

Article information

Article type
Paper
Submitted
12 Mezh. 2024
Accepted
13 Goue. 2024
First published
24 Goue. 2024

J. Mater. Chem. C, 2024,12, 12806-12817

Dual narrowband photodetectors based on halide perovskite single crystal heterojunctions with solution-processed epitaxial growth

D. Zhang, Y. Pan, X. Wang, Z. Wei, Y. Xu, D. C. Onwudiwe, B. S. Bae, M. Ertuğrul, J. Zhou, X. Xu and W. Lei, J. Mater. Chem. C, 2024, 12, 12806 DOI: 10.1039/D4TC02447H

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