Graphdiyne for multilevel flexible organic resistive random access memory devices

Abstract

Graphdiyne (GD), a new carbon allotrope with a 2D structure comprising benzene rings and carbon–carbon triple bonds, is employed in fabricating resistive random access memory (RRAM) devices. On inserting a GD nanoparticle (NP) discontinuous layer and thermally depositing an Al–Al₂O₃ core–shell (Al–Al₂O₃) NP discontinuous layer in insulating polyimide (PI) films on a PET substrate, the designed flexible three-state memory device is realized (PET/Ag/PI/GD/PI/Al–Al₂O₃/PI/Al). GD NPs and Al–Al₂O₃ NPs function as two types of strong electron traps with different energy levels, resulting in two ON states. The OFF state and the two ON states possess long retention times of more than 10⁴ s. Our results here demonstrate that GD could have great potential applications in future information storage technologies.