Themed collection Editor’s Choice: van der Waals heterostructures

Herein, we discuss the features, applications, open challenges and prospects of plasmonics with various classes of two-dimensional semiconductors “beyond graphene”.

Promising vdW assembly constructed with exactly hierarchical structures.

The parameters of the MoS₂/MoTe₂ van der Waals tunnel diode are optimized to obtain a peak-to-valley current ratio of 4.8.

We have realized the first MoS₂-graphene heterostructure nanomechanical resonators with varying thickness and size. Comparing experimental results and theoretical calculations, we have quantified the tension levels in these heterostructure 2D resonators.

A highly efficient H₂ evolution photocatalyst system of few-layered MoS₂/CdS nanosheet-based van der Waals heterostructures has been fabricated through a facile bubble exfoliation strategy.

The large non-saturating magnetoresistance (MR) of bulk WTe₂ is greatly reduced in thin films, and vdW heterojunction engineering can significantly enhance the MR effect.

New, thermodynamically stable allotropes of bilayer GaN are revealed.

The effects of atomic and structural defects on the interlayer properties or configuration in the van der Waals heterostructures have been thoroughly investigated using WS₂ flakes directly grown on graphene.

The critical role of de-charge transfer in tuning the band gap of layered 2D materials.

We observe synergistic photoluminescence of MoS₂/PTCDA vdW heterostructure due to the interface interaction and improved crystal of PTCDA layer.

A strain-tunable WSe₂–CdS mixed-dimensional vdWs heterointerface is demonstrated and the photoresponse is dramatically enhanced with the piezo-phototronic effect.

Coherent manipulation of thermal phonon transport in vdW superlattices can expand the property space beyond that occupied by natural materials.

We developed a new way to enhance the photoresponsivity of a van der Waals heterojunction p–n diode using surface acoustic waves (SAWs).

Single ZnO microwire electrically driven lasers are realized from van der Waals heterostructures.

We present a fast and scalable method for the simultaneous fabrication of multiple nanodevices based on liquid-phase exfoliated van der Waals heterostructures.

An unexpected long-range strain persists in 2D-bonded Bi₂Te₃–Sb₂Te₃ heterostructures.

First-principles calculations suggest that the TiS₃ monolayer has the potential for device applications as a channel material contacting with graphene or other 2D metallic materials to form heterojunctions.

A new scheme for generating perfect spin-polarized quantum transport in zigzag-edged graphene nanoribbons is demonstrated by light irradiation on a h-BN/graphene/h-BN van der Waals (vdW) heterostructure.

Utilizing van der Waals heterostructure gas sensors, we measure the rectification behavior of the sensitivity signal and devise a fingerprint map of the sensitivity variation in a mixture condition of two different gas molecules.

Enhancement of hole mobility in InSe monolayer by forming an InSe/BP vdW heterostructure with type-II band alignment.

2D non-layered CdS_xSe_(1−x) alloys with a tunable composition have been synthesized by incommensurate VDWs epitaxy and possess huge application potential in next-generation optoelectronics.

Hybrid van der Waals (vdW) heterostructures composed of two-dimensional (2D) layered materials and self-assembled organic molecules are promising systems for electronic and optoelectronic applications with enhanced properties and performance.

The relationship between a low interlayer lateral force constant and ultrasmall potential energy corrugation in a graphene/MoS₂ heterostructure provides another viewpoint to the origin of superlubricity.

The vertically stacked MoTe₂/MoS₂ p–n heterojunctions have excellent electronic and optoelectronic characteristics with a type-II band alignment.

Valley degeneracy is lifted by the magnetic proximity effect in MoS₂/EuS vdW heterojunctions and controlled by the electrical field.

A new family of phosphorene-based semiconductor van der Waals heterostructures with layer-dependent electronic properties was yielded by first-principles calculations.

We investigated electrical and photoelectrical properties of graphene sandwiched WSe₂/GaSe van der Waals heterojunctions. The heterojunctions not only can be effectively tunable by back gate, but also show excellent photoresponse such as fast response time down to ∼30 μs.

Configuration-dependent electronic properties of MoS₂/pentacene van der Waals p–n heterostructures imply a space charge zone within the heterostructure.