Themed collection Bioinspired Artificial Synapses and Neurons Based on Memristors
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Enhancing memristor fundamentals through instrumental characterization and understanding reliability issues
A memristor is a promising synaptic device for neuromorphic computing. This review article encompasses various instrumental characterization methods which enhance a fundamental understanding of the switching and reliability mechanisms of memristors.
Mater. Adv., 2023,4, 1850-1875
https://doi.org/10.1039/D3MA00069A
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Reservoir computing using back-end-of-line SiC-based memristors
This work experimentally implements a physical reservoir computing system using a back-end-of-line SiC thin film based memristor to achieve pattern recognition with high accuracy.
Mater. Adv., 2023,4, 5305-5313
https://doi.org/10.1039/D3MA00141E
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Solution-based in situ deposition of Sb2S3 from a single source precursor for resistive random-access memory devices
A one-step, scalable, reproducible, low-temperature, and in situ solvothermal deposition method has been established for the growth of Sb2S3 on FTO using [Sb{S2P{O(Pr)2}3] precursor. The Ag/Sb2S3/FTO device demonstrated low operating voltage and excellent resistive switching characteristics.
Mater. Adv., 2023,4, 4119-4128
https://doi.org/10.1039/D3MA00205E
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Memristive perovskite solar cells towards parallel solar energy harvesting and processing-in-memory computing
Use a single memristive perovskite solar cell device for performing both solar energy harvesting and light-triggered synaptic functionalities.
Mater. Adv., 2022,3, 7002-7014
https://doi.org/10.1039/D2MA00402J
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Emulating the short-term plasticity of a biological synapse with a ruthenium complex-based organic mixed ionic–electronic conductor
This study provides an organic mixed ionic–electronic conductor (OMIEC) memristor based on Ru(bpy)3(PF6)2 as an organic active layer to mimic the STP of a biological synapse.
Mater. Adv., 2022,3, 2827-2837
https://doi.org/10.1039/D1MA01078F
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Transport mechanism of copper sulfide embedded carbon nitride thin films: a formation free memristor
Nonvolatile electrical resistive behaviour was demonstrated for a copper sulfide nanoparticle decorated carbon nitride (CSCN) based device.
Mater. Adv., 2020,1, 228-234
https://doi.org/10.1039/D0MA00062K
About this collection
Guest Edited by Niloufar Raeis-Hosseini (Imperial College London), Ruomeng Huang (University of Southampton), and Sujaya Kumar Vishwanath (Indian Institute of Science).
This themed collection highlights some recent developments and challenges in memristors and their applications in neuromorphic devices. Additionally, it explores the future prospects of nanoelectronic devices and nanomaterials, including 2D materials and hybrid perovskites.