Highly-stable PEN as a gas-barrier substrate for flexible displays via atomic layer infiltration

Abstract

Polymer substrates with superior barrier properties are of great importance for the development of highly-stable flexible displays. The atomic layer infiltration (ALI) method has been utilized to integrate nanoscale inorganic materials in the subsurface of commercial PEN substrates, and the in-suit quartz crystal microbalance (QCM) is employed to study the growth behaviour as the process parameters vary, in which the nucleation and infiltration stages have been demonstrated. The O₂ plasma pre-treatment prior to Al₂O₃ infiltration was used to determine its effect on the water vapor transmission rate (WVTR), and significantly improved barrier properties were observed compared to those of the ones without the O₂ plasma pre-treatment via the electrical Ca tests, which was attributed to the surface clean and improved film adhesion. The lowest WVTR value measured was 1.28 × 10⁻⁵ g m⁻² day⁻¹ for the O₂ plasma pre-treated PEN substrate coated with 100 ALI cycles, which improved 3–4 orders of magnitude compared to that of the pristine ones. Besides, the infiltrated PEN substrate with O₂ plasma pre-treatment exhibited good mechanical stability, with only a slight increase of the WVTR value which was observed after the bending fatigue test with a radius of 5 mm. Furthermore, when applied to the encapsulation of organic light-emitting diodes (OLEDs), the normalized luminance remained above 94% after storage for 800 hours.