Issue 44, 2018

Designing effective Si/Ag interface via controlled chemical etching for photoelectrochemical CO2 reduction

Abstract

Photoelectrochemical reduction of CO2 to value-added chemicals represents a promising approach for artificial photosynthesis, but often suffers from limited selectivity and stability. Improving its performance would require proper design of semiconductor and co-catalyst materials, along with a strategy for effective coupling. Here, we report that controlled chemical etching of Si wafer by Ag+ ions yields effective semiconductor/co-catalyst interface for photoelectrochemical CO2 reduction. Resultant photocathodes exhibit large photocurrent density (∼10 mA cm−2 under 0.5 sun), great CO faradaic efficiency (90% at −0.5 V versus reversible hydrogen electrode), and impressive operational stability (little activity or selectivity loss within 8 h). Further enhancement (by ∼20%) of photocurrent density is achieved by combining photolithography patterning with chemical etching. Our study applies long-known chemistry as an unexpected solution and may provide a new strategy for high-performance photoelectrochemical CO2 reduction.

Graphical abstract: Designing effective Si/Ag interface via controlled chemical etching for photoelectrochemical CO2 reduction

Supplementary files

Article information

Article type
Communication
Submitted
07 юни 2018
Accepted
18 юли 2018
First published
20 юли 2018

J. Mater. Chem. A, 2018,6, 21906-21912

Designing effective Si/Ag interface via controlled chemical etching for photoelectrochemical CO2 reduction

Y. Hu, F. Chen, P. Ding, H. Yang, J. Chen, C. Zha and Y. Li, J. Mater. Chem. A, 2018, 6, 21906 DOI: 10.1039/C8TA05420G

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