Issue 7, 2018

Low temperature thermoelectric and magnetoresistive properties of Tl2Cu3FeQ4 (Q = S, Se, Te)

Abstract

Tl2Cu3FeQ4 (Q = S, Se, Te) belong to the ThCr2Si2 structure type (space group: I4/mmm), which is a layered structure. Alternating metal–chalcogenide layers are formed from TlQ8 square prisms and (Cu/Fe)Q4 tetrahedra; the latter results in a weakly connected Cu-square net. Herein, 25% Fe atoms randomly occupy the Cu-sublattice, which causes magnetic exchange interactions. From the electrical transport property measurements, the sulfide and selenide were found to possess semiconducting characteristics, with room temperature resistivity values of 0.308 and 1.465 × 10−4 Ω m, respectively. The resistivity values gradually increase as the samples were cooled down towards 2 K. The telluride, however, exhibits metallic character with a resistivity of the order of 10−6 Ω m within the measured temperature regime. These layered materials can be good choices as thermoelectrics, due to their low thermal conductivity. Their thermoelectric properties were studied below 350 K, and the selenide composition was found to possess a figure of merit of 0.1 at 350 K. Driven by the Fe-atom disorder, these materials cause phase separation within the largely paramagnetic matrix, reminiscent of well-known rare-earth manganites and iron selenide-based superconductors. The selenide and telluride also exhibit huge negative magnetoresistance (MR) below ferromagnetic transition temperature: a maximum of 50.5% at 2 K for selenide and 22% at 20 K for telluride for an applied field of 9 T. Below 40 K, the telluride exhibits a huge asymmetric MR effect similar to spin-valves where exchange bias effects occur. We attribute these unusual MR features to the phase separated regions within the extended lattice owing to the inhomogeneous distribution of Fe atoms within the Cu-rich sublattice.

Graphical abstract: Low temperature thermoelectric and magnetoresistive properties of Tl2Cu3FeQ4 (Q = S, Se, Te)

Supplementary files

Article information

Article type
Research Article
Submitted
22 яну 2018
Accepted
11 май 2018
First published
15 май 2018

Inorg. Chem. Front., 2018,5, 1553-1562

Low temperature thermoelectric and magnetoresistive properties of Tl2Cu3FeQ4 (Q = S, Se, Te)

V. S. Aswathy and C. R. Sankar, Inorg. Chem. Front., 2018, 5, 1553 DOI: 10.1039/C8QI00058A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements