Carrier transport barrier in AlGaN-based deep ultraviolet LEDs on offcut sapphire substrates

Qiushuang Chen, Li Chen, Cong Chen, Ge Gao, Wei Guo and Jichun Ye

Chin. Opt. Lett., 2024, 22, 022501
DOI: 10.3788/COL202422.022501

High-performance solar-blind photodetector of β-Ga2O3 grown on sapphire with embedding an ultra-thin AlN buffer layer

Zhe Wu, Yuefei Wang, Youheng Song, Shihao Fu, Weizhe Cui, Chong Gao, Danyang Xia, Yurui Han, Bingsheng Li, Aidong Shen and Yichun Liu

Journal of Alloys and Compounds, 2024, 1005, 176156
DOI: 10.1016/j.jallcom.2024.176156

Influence of sapphire substrate miscut on the surface morphology and microstructure of AlN films grown by HVPE

Di Di Li, Xu Jun Su, Jing Jing Chen, Lu Hua Wang, Jun Huang, Mu Tong Niu, Xiaodan Wang, Xionghui Zeng and Ke Xu

Journal of Crystal Growth, 2022, 592, 126731
DOI: 10.1016/j.jcrysgro.2022.126731

Relationship between Annealing and V/III Ratios during MNVPE of AlN Films

Chaoyuan Li, Hui Zhang, Liwei Cao, Xiaosheng Zhang, Xiangyu Lin, Xinjian Xie, Lifeng Bian and Guifeng Chen

Crystal Growth & Design, 2024, 24, 2799
DOI: 10.1021/acs.cgd.3c01446

Structural, Surface and Optical Studies of m- and c-Face AlN Crystals Grown by Physical Vapor Transport Method

Shuping Zhang, Hong Yang, Lianshan Wang, Hongjuan Cheng, Haixia Lu, Yanlian Yang, Lingyu Wan, Gu Xu, Zhe Chuan Feng, Benjamin Klein, Ian T. Ferguson and Wenhong Sun

Materials, 2023, 16, 1925
DOI: 10.3390/ma16051925

Suppressing Dislocations and Excess Compressive Stress in High-Temperature-Annealed AlN Films through Macrostep-Induced Dislocation Inclination

Hualong Wu, Chenguang He, Jiabo Ge, Kang Zhang, Yunzhou Liu, Qiao Wang, Longfei He, Wei Zhao and Zhitao Chen

Crystal Growth & Design, 2025, 25, 2347
DOI: 10.1021/acs.cgd.4c01272

A comparative investigation of the optical properties of polar and semipolar GaN epi-films grown by metalorganic chemical vapor deposition

Haixia Lu, Lianshan Wang, Yao Liu, Shuping Zhang, Yanlian Yang, Vishal Saravade, Zhe Chuan Feng, Benjamin Klein, Ian T Ferguson, Lingyu Wan and Wenhong Sun

Semicond. Sci. Technol., 2022, 37, 065021
DOI: 10.1088/1361-6641/ac696f