Optimizing metal/n-AlGaN contact by recessed AlGaN heterostructure with a polarization effect

Yuxuan Chen, Ke Jiang, Xiaojuan Sun, Zi-Hui Zhang, Shanli Zhang, Jianwei Ben, Bingxiang Wang, Long Guo and Dabing Li

Nanoscale Adv., 2023, 5, 2530
DOI: 10.1039/D2NA00813K

The stacking fault annihilation in a-plane AlN during high-temperature annealing

Xiaojuan Sun, Jiaen Sui, Jianwei Ben, Hang Zang, Ke Jiang, Shanli Zhang, Shunpeng Lv, Zhiming Shi, Tong Wu and Dabing Li

CrystEngComm, 2023, 25, 1903
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The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes

Tien-Yu Wang, Wei-Chih Lai, Qiao-Ju Xie, Shun-Hao Yang, Sheng-Po Chang, Cheng-Huang Kuo and Jinn-Kong Sheu

RSC Adv., 2023, 13, 5437
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The dependence of light extraction improvement on optimized surface microstructure for AlGaN-based UVC-LEDs considering TM-polarized emission

Yifan Zhu, Huimin Lu, Jianping Wang, Tongjun Yu, Zizheng Li and Yucheng Tian

Micro and Nanostructures, 2023, 181, 207614
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Enhancing the optical and thermal performance of Ce:YAG phosphors through multi-component co-doping

Suwen Xiong, Dongping Zhou, Chang Min, Xuanchu Liu, Zitong Liu, Jian Kang, Enjin Liu, Tianyuan Zhou, Guiming Li, Yanbin Li, Wieslaw Strek, Hao Chen and Le Zhang

Opt. Express, 2025, 33, 21619
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Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes

Jing Lang, Fujun Xu, Jiaming Wang, Lisheng Zhang, Xuzhou Fang, Ziyao Zhang, Xueqi Guo, Chen Ji, Chengzhi Ji, Fuyun Tan, Yong Wu, Xuelin Yang, Xiangning Kang, Zhixin Qin, Ning Tang, Xinqiang Wang, Weikun Ge and Bo Shen

Adv Elect Materials, 2025, 11
DOI: 10.1002/aelm.202300840

Development of highly efficient ultraviolet LEDs on hybrid patterned sapphire substrates

Huabin Yu, Hongfeng Jia, Zhongling Liu, Muhammad Hunain Memon, Meng Tian, Shi Fang, Danhao Wang, Haochen Zhang, Jianzhe Liu, Liang Xu, Tianpeng Yang, Long Wei, Zhaoliang Liao and Haiding Sun

Opt. Lett., 2021, 46, 5356
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Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall

Meng Tian, Huabin Yu, Muhammad Hunain Memon, Zhanyong Xing, Chen Huang, Hongfeng Jia, Haochen Zhang, Danhao Wang, Shi Fang and Haiding Sun

Opt. Lett., 2021, 46, 4809
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Enhancement of wall-plug efficiency in AlGaN deep-ultraviolet light-emitting diodes by micro-mesh p-electrode and scattering nanostructures

Guo-Dong Hao, Manabu Taniguchi and Shin-ichiro Inoue

Applied Physics Letters, 2025, 126
DOI: 10.1063/5.0255184

Investigation of Modulation Bandwidth of InGaN Green Micro-LEDs by Varying Quantum Barrier Thickness

Zexing Yuan, Yanzhe Li, Xinyi Lu, Zhou Wang, Pengjiang Qiu, Xugao Cui, Pengfei Tian, Qi Wang and Guoyi Zhang

IEEE Trans. Electron Devices, 2022, 69, 4298
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In-Depth Investigation of Deep Ultraviolet MicroLED Geometry for Enhanced Performance

Shudan Xiao, Huabin Yu, Muhammad Hunain Memon, Hongfeng Jia, Yuanmin Luo, Rui Wang and Haiding Sun

IEEE Electron Device Lett., 2023, 44, 1520
DOI: 10.1109/LED.2023.3294819

Efficient Deep Ultraviolet Emission from Self-Organized AlGaN Quantum Wire Array Grown On Ultrathin Step-bunched AlN Templates

Chenguang He, Hualong Wu, Kang Zhang, Yunzhou Liu, Qiao Wang, Longfei He, Quantong Li, Bin Dong, Shan Zhang, Wei Zhao, Zhitao Chen and Bo Shen

Crystal Growth & Design, 2024, 24, 1551
DOI: 10.1021/acs.cgd.3c00990

Design and Growth of P-Type AlGaN Graded Composition Superlattice

Yang Liu, Xue Yang, Xiaowei Zhou, Peixian Li, Bo Yang, Zhuang Zhao, Yingru Xiang and Junchun Bai

Micromachines, 2024, 15, 1420
DOI: 10.3390/mi15121420

Alleviated Asymmetry in Carrier Transport With V-Shaped Multiple Quantum Wells in AlGaN-Based DUV LEDs

Ying Qi, Hang Zhou, Mengran Liu and Chao Liu

IEEE Trans. Electron Devices, 2025, 72, 2431
DOI: 10.1109/TED.2025.3552359

Transparent p-type layer with highly reflective Rh/Al p-type electrodes for improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes

Liubing Wang, Fujun Xu, Jing Lang, Jiaming Wang, Lisheng Zhang, Xuzhou Fang, Ziyao Zhang, Xueqi Guo, Chen Ji, Xiangning Kang, Ning Tang, Xinqiang Wang, Zhixin Qin, Weikun Ge and Bo Shen

Jpn. J. Appl. Phys., 2023, 62, 030904
DOI: 10.35848/1347-4065/acbf14

Performance enhancement of ultraviolet light-emitting diodes by manipulating Al composition of InGaN/AlGaN superlattice strain release layer

Yinzuo Qian, Peng Du, Pengfei Liu and Shengjun Zhou

Journal of Applied Physics, 2022, 131
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Adsorption properties of Al, Ga, and N related particles on GaN substrate surface by first principle calculations

Libin Zhang, Jiacheng Zhou, Bo Yang, Chengjun Zhang, Ting Qi, Yuqin Wu, Zhiyin Gan, Sheng Liu and Longchao Cao

Journal of Crystal Growth, 2022, 598, 126857
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Growth and Characterization of Nonpolar Nanoporous AlN by Inward Conversion of (004) γ-LiAlO2 Crystals

Feijie Chen, Wusi Zhang, Zhicheng Zhang, Mitch M.C. Chou, Chao-Yi Fang, Chunyu Lee and Chenlong Chen

Crystal Growth & Design, 2024, 24, 10216
DOI: 10.1021/acs.cgd.4c01198

Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters

Jiaming Wang, Chen Ji, Jing Lang, Fujun Xu, Lisheng Zhang, Xiangning Kang, Zhixin Qin, Xuelin Yang, Ning Tang, Xinqiang Wang, Weikun Ge and Bo Shen

Nat Commun, 2024, 15
DOI: 10.1038/s41467-024-53857-3

Progress in high crystalline quality AlN grown on sapphire for high-efficiency deep ultraviolet light-emitting diodes

F. J. Xu and B. Shen

Jpn. J. Appl. Phys., 2022, 61, 040502
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