Issue 2, 2024

Carrier density and delocalization signatures in doped carbon nanotubes from quantitative magnetic resonance

Abstract

High-performance semiconductor materials and devices are needed to supply the growing energy and computing demand. Organic semiconductors (OSCs) are attractive options for opto-electronic devices, due to their low cost, extensive tunability, easy fabrication, and flexibility. Semiconducting single-walled carbon nanotubes (s-SWCNTs) have been extensively studied due to their high carrier mobility, stability and opto-electronic tunability. Although molecular charge transfer doping affords widely tunable carrier density and conductivity in s-SWCNTs (and OSCs in general), a pervasive challenge for such systems is reliable measurement of charge carrier density and mobility. In this work we demonstrate a direct quantification of charge carrier density, and by extension carrier mobility, in chemically doped s-SWCNTs by a nuclear magnetic resonance approach. The experimental results are verified by a phase-space filling doping model, and we suggest this approach should be broadly applicable for OSCs. Our results show that hole mobility in doped s-SWCNT networks increases with increasing charge carrier density, a finding that is contrary to that expected for mobility limited by ionized impurity scattering. We discuss the implications of this important finding for additional tunability and applicability of s-SWCNT and OSC devices.

Graphical abstract: Carrier density and delocalization signatures in doped carbon nanotubes from quantitative magnetic resonance

Supplementary files

Article information

Article type
Communication
Submitted
26 окт 2023
Accepted
21 ноя 2023
First published
22 ноя 2023
This article is Open Access
Creative Commons BY license

Nanoscale Horiz., 2024,9, 278-284

Carrier density and delocalization signatures in doped carbon nanotubes from quantitative magnetic resonance

M. A. Hermosilla-Palacios, M. Martinez, E. A. Doud, T. Hertel, A. M. Spokoyny, S. Cambré, W. Wenseleers, Y. Kim, A. J. Ferguson and J. L. Blackburn, Nanoscale Horiz., 2024, 9, 278 DOI: 10.1039/D3NH00480E

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