Issue 24, 2023

On the factors affecting the response time of synaptic ion-gated transistors

Abstract

Ion-Gated Transistors (IGTs) feature the processing rate of the human brain for neuromorphic computing. Furthermore, they require low power for training and deployment of neural network algorithms. Neuromorphic computing requires both long-term and short-term potentiation, within the same device. The nature of the doping mechanism in IGTs affects their time-resolved properties, key for their use as neuromorphic devices. Depending on the permeability of the semiconducting channel to ions, IGTs undergo electrochemical (three-dimensional) or electrostatic (field-effect, two-dimensional) doping, which leads to a wide range of IGT response times. Here, we propose a methodology to control the response time of IGTs made up of films of poly(3-hexylthiophene (P3HT) as the semiconducting channel and the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide [EMIM][TFSI] as the gating medium. The methodology includes the effect of the pulse frequency of the applied gate-source voltage (Vgs), the number of applied Vgs pulses, and the Vgs pulse duration. It also considers the effect of the values of the applied Vgs and drain-source (Vds) voltages. Last but not least, the methodology includes the effect of the Vgs sampling time. Our results contribute to the understanding of how to achieve plasticity in IGTs.

Graphical abstract: On the factors affecting the response time of synaptic ion-gated transistors

Supplementary files

Article information

Article type
Paper
Submitted
14 yan 2023
Accepted
10 may 2023
First published
11 may 2023

J. Mater. Chem. C, 2023,11, 8293-8299

On the factors affecting the response time of synaptic ion-gated transistors

R. Karimi Azari, T. Lan and C. Santato, J. Mater. Chem. C, 2023, 11, 8293 DOI: 10.1039/D3TC00161J

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