Issue 24, 2023

Atomic layer deposition of HfNx films and improving the film performance by annealing under NH3 atmosphere

Abstract

HfNx films were deposited by atomic layer deposition (ALD) using Hf[N(CH3)(C2H5)]4 (TEMAHf) and NH3 as the Hf-precursor and reactant gas, respectively. A precleaning step using TEMAHf as a reducing agent was devised to minimize the oxygen concentration in the as-deposited film. Consequently, the oxygen concentration in the film was reduced by ∼66%. In addition, the carbon impurity concentration caused by the side effects of the precleaning step and the remaining oxygen concentration were effectively reduced through post-NH3 annealing. The oxygen concentration inside HfNx decreased as the annealing temperature increased. HfNx films annealed under 900 °C showed dielectric properties similar to hafnium oxynitride (HfOxNy). However, films annealed over 950 °C transformed into a more electrically conducting HfN film, showing a resistivity of ∼106 μΩ cm.

Graphical abstract: Atomic layer deposition of HfNx films and improving the film performance by annealing under NH3 atmosphere

Supplementary files

Article information

Article type
Paper
Submitted
20 sen 2022
Accepted
01 dek 2022
First published
16 dek 2022

J. Mater. Chem. C, 2023,11, 8018-8026

Atomic layer deposition of HfNx films and improving the film performance by annealing under NH3 atmosphere

S. K. Ryoo, B. Y. Kim, Y. B. Lee, H. W. Park, S. H. Lee, M. Oh, I. S. Lee, S. Y. Byun, D. S. Shim, J. H. Lee, H. N. Kim, K. Do Kim and C. S. Hwang, J. Mater. Chem. C, 2023, 11, 8018 DOI: 10.1039/D2TC03964H

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