Issue 16, 2023

Strain-induced ordered Ge(Si) hut wires on patterned Si (001) substrates

Abstract

Ge/Si nanowires are predicted to be a promising platform for spin and even topological qubits. While for large-scale integration of these devices, nanowires with fully controlled positions and arrangements are a prerequisite. Here, we have reported ordered Ge hut wires by multilayer heteroepitaxy on patterned Si (001) substrates. Self-assembled GeSi hut wire arrays are orderly grown inside patterned trenches with post growth surface flatness. Such embedded GeSi wires induce tensile strain on the Si surface, which results in preferential nucleation of Ge nanostructures. Ordered Ge nano-dashes, disconnected wires and continuous wires are obtained correspondingly by tuning the growth conditions. These site-controlled Ge nanowires on a flattened surface lead to the ease of fabrication and large-scale integration of nanowire quantum devices.

Graphical abstract: Strain-induced ordered Ge(Si) hut wires on patterned Si (001) substrates

Article information

Article type
Paper
Submitted
23 sen 2022
Accepted
15 fev 2023
First published
21 mar 2023

Nanoscale, 2023,15, 7311-7317

Strain-induced ordered Ge(Si) hut wires on patterned Si (001) substrates

M. Ming, F. Gao, J. Wang, J. Zhang, T. Wang, Y. Yao, H. Hu and J. Zhang, Nanoscale, 2023, 15, 7311 DOI: 10.1039/D2NR05238E

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