Issue 25, 2022

Recent progress of the single crystal growth of homologous (InGaO3)m(ZnO)n

Abstract

Compounds composed of In–Ga–Zn–O (IGZO) have characteristic homologous crystal structures represented by the following general formula: (InGaO3)m(ZnO)n. Such compounds have been applied in many fields since the discovery that amorphous oxide thin films have high electron mobility. On the other hand, very few studies have been conducted on single crystals or the bulk behavior of IGZO compounds as growing large crystals is difficult. Consequently, the physical properties have not been clarified. In this review, we summarize the historical background of IGZO regarding the crystal structure and crystal growth, and introduce our successful method for growing large single crystals of InGaZnO4. We also introduce the micro-crystals of (InGaO3)2(ZnO)1.

Graphical abstract: Recent progress of the single crystal growth of homologous (InGaO3)m(ZnO)n

Article information

Article type
Highlight
Submitted
30 mar 2022
Accepted
09 iyn 2022
First published
10 iyn 2022
This article is Open Access
Creative Commons BY-NC license

CrystEngComm, 2022,24, 4481-4495

Recent progress of the single crystal growth of homologous (InGaO3)m(ZnO)n

N. Kase, N. Kimizuka and N. Miyakawa, CrystEngComm, 2022, 24, 4481 DOI: 10.1039/D2CE00439A

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