Issue 11, 2017

Additive engineering for high-performance room-temperature-processed perovskite absorbers with micron-size grains and microsecond-range carrier lifetimes

Abstract

Perovskite photovoltaics have attracted remarkable attention recently due to their exceptional power conversion efficiencies (PCE). State-of-the-art perovskite absorbers typically require thermal annealing steps for high film quality. However, the annealing process adds cost and reduces yield for device fabrication and may also hinder application in tandem photovoltaics and flexible/ultra-low-cost optoelectronics. Herein, we report an additive-based room-temperature process for realizing high-quality methylammonium lead iodide films with micron-sized grains (>2 μm) and microsecond-range carrier lifetimes (τ1 = 931.94 ± 89.43 ns; τ2 = 320.41 ± 43.69 ns). Solar cells employing such films demonstrate 18.22% PCE with improved current–voltage hysteresis and stability without encapsulation. Further, we reveal that room-temperature-processed perovskite film grain size strongly depends on the precursor aggregate size in the film-deposition solution and that additive-based tuning of aggregate properties enables enlarging grains to the micron scale. These results offer a new pathway for more versatile, cost-effective perovskite processing.

Graphical abstract: Additive engineering for high-performance room-temperature-processed perovskite absorbers with micron-size grains and microsecond-range carrier lifetimes

Supplementary files

Article information

Article type
Paper
Submitted
10 avq 2017
Accepted
13 okt 2017
First published
13 okt 2017

Energy Environ. Sci., 2017,10, 2365-2371

Additive engineering for high-performance room-temperature-processed perovskite absorbers with micron-size grains and microsecond-range carrier lifetimes

Q. Han, Y. Bai, J. Liu, K. Du, T. Li, D. Ji, Y. Zhou, C. Cao, D. Shin, J. Ding, A. D. Franklin, J. T. Glass, J. Hu, M. J. Therien, J. Liu and D. B. Mitzi, Energy Environ. Sci., 2017, 10, 2365 DOI: 10.1039/C7EE02272G

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