Issue 13, 2016

High-performance perovskite light-emitting diodes via morphological control of perovskite films

Abstract

Solution-processable perovskite materials have garnered tremendous attention because of their excellent charge carrier mobility, possibility of a tunable optical bandgap, and high photoluminescence quantum efficiency (PLQE). In particular, the uniform morphology of a perovskite film is the most important factor in realizing perovskite light-emitting diodes (PeLEDs) with high efficiency and full-coverage electroluminescence (EL). In this study, we demonstrate highly efficient PeLEDs that contain a perovskite film with a uniform morphology by introducing HBr into the perovskite precursor. The introduction of HBr into the perovskite precursor results in a perovskite film with a uniform, continuous morphology because the HBr increases the solubility of the inorganic component in the perovskite precursor and reduces the crystallization rate of the perovskite film upon spin-coating. Moreover, PeLEDs fabricated using perovskite films with a uniform, continuous morphology, which were deposited using 6 vol% HBr in a dimethylformamide (DMF)/hydrobromic acid (HBr) cosolvent, exhibited full coverage of the green EL emission. Finally, the optimized PeLEDs fabricated with perovskite films deposited using the DMF/HBr cosolvent exhibited a maximum luminance of 3490 cd m−2 (at 4.3 V) and a luminous efficiency of 0.43 cd A−1 (at 4.3 V).

Graphical abstract: High-performance perovskite light-emitting diodes via morphological control of perovskite films

Supplementary files

Article information

Article type
Paper
Submitted
18 avq 2015
Accepted
10 noy 2015
First published
13 noy 2015
This article is Open Access
Creative Commons BY-NC license

Nanoscale, 2016,8, 7036-7042

High-performance perovskite light-emitting diodes via morphological control of perovskite films

J. C. Yu, D. B. Kim, E. D. Jung, B. R. Lee and M. H. Song, Nanoscale, 2016, 8, 7036 DOI: 10.1039/C5NR05604G

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