The relevance of Cr defects and photoelectrochemical water oxidation activity of monoclinic PbCrO4 films
Abstract
The presence of Cr defects in monoclinic PbCrO4 is closely related to its solar water oxidation activity, which has been overlooked in the preparation of PbCrO4 films and remains unexplored in research on PbCrO4 photoanodes. Herein, monoclinic PbCrO4 films with few Cr defects (PbCrO4-FVCr) were prepared on FTO substrate by drop-coating Pb2+/Cr3+ precursor solution to reduce the loss of Cr during thermal treatment. Relative to the monoclinic PbCrO4 films with rich Cr defects (PbCrO4-RVCr), higher solar water oxidation activity was achieved using the PbCrO4-FVCr films as photoanodes. At 1.23 V vs. RHE, a higher water oxidation photocurrent of 1.13 mA cm−2 was produced on the PbCrO4-FVCr film photoanodes, which is twice that of the PbCrO4-RVCr film photoanodes (0.55 mA cm−2). Meanwhile, the PbCrO4-FVCr film photoanodes had faster water oxidation kinetics than PbCrO4-RVCr film photoanodes. The water oxidation rate constant (kO2) on the PbCrO4-FVCr film photoanodes was 40.6 s−1, while a lower kO2 of 8.2 s−1 was observed on the PbCrO4-RVCr film photoanodes. Experimental and theoretical analyses jointly revealed that PbCrO4 films with fewer Cr defects have higher solar water oxidation activity for the following reasons: (i) the presence of Cr defects can result in the formation of deep energy levels in PbCrO4, which are unfavorable for carrier transfer in the bulk of PbCrO4 films; (ii) the presence of Cr defects leads to the formation of unsaturated O dangling bonds on PbCrO4, which act as detrimental traps that hinder carrier separation at the surface of PbCrO4 films; (iii) Cr has a half-filled 3d5 orbital to provide active sites for reaction, so the presence of Cr defects weakens the catalytic activity of PbCrO4 for water oxidation, and the dehydrogenation of *OH into *O becomes the rate-limiting step, which requires a high energy barrier of 1.88 eV. The present work provides insights into monoclinic PbCrO4 film photoanodes in terms of preparation conditions, Cr defects, water oxidation activity and reaction mechanism.

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