Tunable electronic properties and related functional devices for ferroelectric In2Se3/MoSSe van der Waals heterostructures

Y. Zhang, X. Q. Deng, Q. Jing, Z. H. Zhang and X. Ding

RSC Adv., 2023, 13, 228
DOI: 10.1039/D2RA06337A

Unraveling the Role of F-Type Color Centers on the Optical and Electrical Properties of Al2W3O12 Nanoparticles with Different Content of Oxygen Vacancies

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J. Phys. Chem. C, 2025, 129, 2649
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Tunable electronic and optical properties of BAs/WTe2 heterostructure for theoretical photoelectric device design

Wentao Luo, Xing Wei, Jiaxin Wang, Yan Zhang, Huaxin Chen, Yun Yang, Jian Liu, Ye Tian and Li Duan

J. Phys.: Condens. Matter, 2024, 36, 255501
DOI: 10.1088/1361-648X/ad3371

A Review of Bandgap Engineering and Prediction in 2D Material Heterostructures: A DFT Perspective

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IJMS, 2024, 25, 13104
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Investigation of effects of interlayer interaction and biaxial strain on the phonon dispersion and dielectric response of hexagonal boron arsenide

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Sci Rep, 2023, 13
DOI: 10.1038/s41598-023-48654-9

Two-dimensional type-II XMoSiP2/BAs (X= S, Se) van der Waals heterostructures for highly efficient excitonic solar cells

Nayereh Ghobadi, Somayeh Gholami Rudi and Samaneh Soleimani-Amiri

Solar Energy Materials and Solar Cells, 2024, 269, 112773
DOI: 10.1016/j.solmat.2024.112773

Modulating the electronic and optical properties of CrI3/In2Se3 van der Waals heterostructures by external fields

Jingkun Hu, Zhiqiang Fan and Junbo Yang

Materials Today Communications, 2024, 39, 108891
DOI: 10.1016/j.mtcomm.2024.108891

Novel antimonene/BAs heterojunction modulating electronic properties by external electric field: A DFT study

Yi Ma, ZheYing Wang, JingEn Jia and YaNing Niu

Chemical Physics Letters, 2025, 142315
DOI: 10.1016/j.cplett.2025.142315

Calculation of tunable optical and electronic properties of two-dimensional AlSb/BAs heterojunction based on first principles

Zhaohu Lu, Shaolei Jia, Guanghao Li, Pingwei Sun, Shangrui Jiang, Yingying Cao, Jiayu Li and Shiwei Jing

Materials Science in Semiconductor Processing, 2024, 173, 108163
DOI: 10.1016/j.mssp.2024.108163

Transition of the electronic structure in the BAs/CrS2 van der Waals heterostructure

Meichen Wu, Zhenduo Wang, Furong Xie, Yuhong Huang, Jianmin Zhang, Haiping Lin and Xiumei Wei

Computational Materials Science, 2024, 242, 113068
DOI: 10.1016/j.commatsci.2024.113068

Adjustable interface characteristics of ferroelectric In2Se3/GaN van der Waals heterojunctions: The outstanding electronic, mechanical, photocatalytic properties and power conversion efficiency

X.Q. Deng, Z.S. Zhang, Y. Zhang, J.J. He, J.W. Tan and Q. Zhang

Surfaces and Interfaces, 2025, 61, 106088
DOI: 10.1016/j.surfin.2025.106088

Optoelectronic properties of two-dimensional heterostructure BAs/I-AsP under strain and electric field modulation

Junhua HAO, Delong ZHANG, Zhengjia WANG, Shuxin CHEN and Yufang WANG

Acta Phys. Sin., 2025, 74, 107102
DOI: 10.7498/aps.74.20250196

Interfacial electronic characteristics of the ferroelectric In2Se3/GeC heterojunction and the design of switching devices

Z.S. Zhang, J.J. He, J.W. Tan and X.Q. Deng

Computational Materials Science, 2025, 248, 113575
DOI: 10.1016/j.commatsci.2024.113575

Flexible switch between photocatalysis and electrocatalysis for CO2RR by stacking mode

Meichen Wu, Zhenduo Wang, Furong Xie, Huaiyu Xie, Yuhong Huang, Ruhai Du, Haiping Lin and Xiumei Wei

Surfaces and Interfaces, 2025, 66, 106592
DOI: 10.1016/j.surfin.2025.106592