First-principles analysis of structural stability, mechanical anisotropy, and thermophysical and electronic properties of Cu–Pd intermetallic compounds: a comparative study of CuPd, CuPd3, Cu3Pd, and Cu4Pd†
Abstract
This study employs density functional theory to examine the intermetallic compounds CuPd, CuPd3, Cu3Pd, and Cu4Pd for use in advanced microelectronic packaging. Static elastic-constant calculations verify mechanical stability, and phonon dispersions along high-symmetry directions display no imaginary frequencies, confirming dynamical stability. All four phases are metallic according to band structures and density-of-states analyses. Among the series, Cu3Pd delivers the greatest shear modulus at 55 GPa and the highest average Vickers hardness at 5.22 GPa, a consequence of its balanced tetragonal bonding network. Cu4Pd is the most compliant, exhibiting the largest ductility index with K over G equal to 3.35 but the lowest hardness at 3.81 GPa. Fracture-toughness predictions indicate that CuPd3 reaches the maximum KIC at 1.47 MPa m1/2, whereas Cu4Pd records the minimum at 1.23 MPa m1/2, reflecting differences in bonding character and symmetry. Universal, equivalent Zener and log Euclidean anisotropy indices identify CuPd as strongly anisotropic and Cu3Pd as nearly isotropic with AU equal to 0.86. Thermophysical analysis shows Cu3Pd possessing the highest Debye temperature at 338 K, the greatest lattice thermal conductivity under ambient conditions at 6.86 W m−1 K−1 and the lowest thermal-expansion coefficient at 29.1 × 10−6 K−1, all consistent with stiff bonds and limited phonon scattering. Cu4Pd displays pronounced anharmonicity, with the largest expansion at 36.4 × 10−6 K−1 and the weakest conductivity at 1.38 W m−1 K−1. Calculated melting temperatures span 1178 to 1285 K and track with bulk-modulus trends. The brittleness index highlights CuPd as the most damage tolerant, whereas Cu3Pd is the most brittle. External hydrostatic pressure up to 15 GPa markedly enhances bulk and shear moduli, raises Debye temperatures and boosts lattice thermal conductivity. For example, the conductivity of Cu3Pd increases to 9.78 W m−1 K−1, and elastic anisotropy in CuPd is slightly reduced. These findings indicate that Cu3Pd is well suited for high-temperature high-power assemblies that demand mechanical rigidity and thermal stability, whereas Cu4Pd offers superior compliance for joints that must accommodate large thermal strains. The results provide a comprehensive foundation for tailoring Cu–Pd intermetallics for next generation electronic packaging.