Issue 8, 2020

Design and circuit simulation of nanoscale vacuum channel transistors

Abstract

Nanoscale vacuum channel transistors (NVCTs) are promising candidates in electronics due to their high frequency, fast response and high reliability, and have attracted considerable attention for structural design and optimization. However, conventional modeling for vacuum devices tends to focus on the work function or electric field distribution for an individual structure. Therefore, it is desirable for a new simulation method to explore the function circuits of NVCTs, e.g. high-speed logic circuits. In this study, a complete simulation of the fabrication, structure design and circuit simulation of NVCTs is demonstrated. First, the fabrication process was designed to be compatible with current semiconductor technology. Then, the “fabricated” structure was directly employed to investigate the influence of the structure parameters on the electrical performance. Furthermore, we explore the possibility of implementing an invert circuit with a single optimal NVCT. To the best of our knowledge, this is the first demonstration of a vacuum-state invertor with a circuit-simulation module in which NVCT functions as a conventional triode or FET. These simulation results illustrate the feasibility of integrating NVCTs into functional circuits and provide a theoretical method for future on-chip vacuum transistors applied in logic or radio-frequency (RF) devices.

Graphical abstract: Design and circuit simulation of nanoscale vacuum channel transistors

Associated articles

Article information

Article type
Paper
Submitted
29 মে 2020
Accepted
27 জুন 2020
First published
29 জুন 2020
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2020,2, 3582-3587

Design and circuit simulation of nanoscale vacuum channel transistors

J. Xu, Y. Qin, Y. Shi, Y. Shi, Y. Yang and X. Zhang, Nanoscale Adv., 2020, 2, 3582 DOI: 10.1039/D0NA00442A

This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. You can use material from this article in other publications, without requesting further permission from the RSC, provided that the correct acknowledgement is given and it is not used for commercial purposes.

To request permission to reproduce material from this article in a commercial publication, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party commercial publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements