Issue 31, 2016

Tunable electronic structure and enhanced optical properties in quasi-metallic hydrogenated/fluorinated SiC heterobilayer

Abstract

Graphene-like silicon carbide (SiC) has emerged as a rapidly rising star on the horizon of two-dimensional (2D) layered materials. In this work, we execute a systematic theoretical investigation of the atomic and electronic structure of a fully hydrogenated/fluorinated SiC (H/F-SiC) heterobilayer, which has a quasi-metallic character in its most stable stacking pattern, to predict its electronic and optical properties. We demonstrate that a direct band gap at the Γ point can be opened in the quasi-metallic H/F-SiC heterobilayer by applying an external electric field (E-field). Especially, when altering the strength of the E-field, this system undergoes a transition from quasi-metallic state to semiconductor. We predict that the mobilities are rather high due to the low carrier effective mass and high Fermi velocity. Light absorption spectra indicate that the H/F-SiC heterobilayer has evident infrared light absorption, and complete electron–hole separation can enhance the photocatalytic efficiency. Our findings pave the way for experimental research on the development of 2D material science using weak interlayer interactions and indicate the great application potential of the H/F-SiC heterobilayer in future nanoelectronics and optoelectronics.

Graphical abstract: Tunable electronic structure and enhanced optical properties in quasi-metallic hydrogenated/fluorinated SiC heterobilayer

Supplementary files

Article information

Article type
Paper
Submitted
14 মে 2016
Accepted
11 জুলাই 2016
First published
12 জুলাই 2016

J. Mater. Chem. C, 2016,4, 7406-7414

Tunable electronic structure and enhanced optical properties in quasi-metallic hydrogenated/fluorinated SiC heterobilayer

X. Chen, J. Jiang, Q. Liang, R. Meng, C. Tan, Q. Yang, S. Zhang and H. Zeng, J. Mater. Chem. C, 2016, 4, 7406 DOI: 10.1039/C6TC01988A

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