Issue 36, 2023

Going ballistic: a novel characterization for the electronic energy gap

Abstract

The energy gap of molecular semiconductors is a critical parameter in molecule-based devices because it fundamentally determines the operating principle and device performance, such as the charge transfer driving force. Hence, an accurate quantification of the energy gap of a molecular semiconductor is essential. The hot electron technique, which is implemented using a hot electron transistor and ballistic electron emission microscope, has been verified as the most powerful characterization in recent years. By monitoring the charge transport on the metal/molecule interface, an electron-injection barrier (or LUMO) and hole-injection barrier (or HOMO) can be achieved, which contributes to the electronic energy gap determination. In this review, a comprehensive comparison of these two techniques was made. It helps us to select a suitable method in specific situations and provides a profound comprehension of the charge transport process in molecular semiconductor and molecule-based devices.

Graphical abstract: Going ballistic: a novel characterization for the electronic energy gap

Article information

Article type
Perspective
Submitted
18 ذو الحجة 1444
Accepted
02 صفر 1445
First published
06 صفر 1445

Phys. Chem. Chem. Phys., 2023,25, 24234-24243

Going ballistic: a novel characterization for the electronic energy gap

X. Zhou, Q. Li, Y. Fang, H. Xu and C. Han, Phys. Chem. Chem. Phys., 2023, 25, 24234 DOI: 10.1039/D3CP03190J

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