Issue 44, 2019

High-performance CdScInO thin-film transistors and their stability improvement under negative bias (illumination) temperature stress

Abstract

Recently, the performance of thin-film transistors (TFTs) with amorphous oxide semiconductors (AOSs) has been substantially improved. However, the device reliability under negative bias illumination/temperature stress (NBI/TS) remains a critical issue. Herein, a Cd and Sc co-doped In2O3 semiconductor (CdScInO) is developed for improving the NBI/TS stability of TFTs. The mobility, subthreshold swing, and on/off ratio of the CdScInO TFT are 15.9 cm2 V−1 s−1, 89 mV dec−1 and ∼107, respectively. More interestingly, the CdScInO TFTs exhibit excellent stability under NBTS at 80 °C or under NBIS with red light or green light illumination, while a threshold voltage shift of only −0.91 V is observed under NBIS with blue light illumination for 3600 s. First-principles calculations show that the Cd dopants cause the formation of holes, which can be bound with oxygen vacancies (VOs) to form Cd–VO pairs. Furthermore, the density of states near the valence band maximum decreases due to the upward repulsion between the O p states and the Cd d states. Thus, the activation of VO or electron donor defects is suppressed, which explains the NBI/TS stability improvement for CdScInO TFTs.

Graphical abstract: High-performance CdScInO thin-film transistors and their stability improvement under negative bias (illumination) temperature stress

Supplementary files

Article information

Article type
Paper
Submitted
10 محرم 1441
Accepted
14 صفر 1441
First published
16 صفر 1441

J. Mater. Chem. C, 2019,7, 13960-13965

High-performance CdScInO thin-film transistors and their stability improvement under negative bias (illumination) temperature stress

T. Long, X. Dai, L. Lan, C. Deng, Z. Chen, C. He, L. Liu, X. Yang and J. Peng, J. Mater. Chem. C, 2019, 7, 13960 DOI: 10.1039/C9TC04989D

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements