Issue 1, 2017

Type-I van der Waals heterostructure formed by MoS2 and ReS2 monolayers

Abstract

We report a van der Waals heterostructure formed by monolayers of MoS2 and ReS2 with a type-I band alignment. First-principle calculations show that in this heterostructure, both the conduction band minimum and the valence band maximum are located in the ReS2 layer. This configuration is different from previously accomplished type-II van der Waals heterostructures where electrons and holes reside in different layers. The type-I nature of this heterostructure is evident by photocarrier dynamics observed by transient absorption measurements. We found that carriers injected in MoS2 transfer to ReS2 in about 1 ps, while no charge transfer was observed when carriers are injected in ReS2. The carrier lifetime in the heterostructure is similar to that in monolayer ReS2, further confirming the lack of charge separation. We attribute the slower transfer time to the incoherent nature of the charge transfer due to the different crystal structures of the two materials forming the heterostructure. The demonstrated type-I semiconducting van der Waals heterostructure provides new ways to utilize two-dimensional materials for light emission applications, and a new platform to study light–matter interaction in atomically thin materials with strong confinement of electrons and holes.

Graphical abstract: Type-I van der Waals heterostructure formed by MoS2 and ReS2 monolayers

Supplementary files

Article information

Article type
Communication
Submitted
25 شوال 1437
Accepted
22 ذو الحجة 1437
First published
22 ذو الحجة 1437

Nanoscale Horiz., 2017,2, 31-36

Type-I van der Waals heterostructure formed by MoS2 and ReS2 monolayers

M. Z. Bellus, M. Li, S. D. Lane, F. Ceballos, Q. Cui, X. C. Zeng and H. Zhao, Nanoscale Horiz., 2017, 2, 31 DOI: 10.1039/C6NH00144K

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements