Issue 48, 2022

Ultrasensitive photodetectors based on graphene quantum dot-InSe mixed-dimensional van der Waals heterostructures

Abstract

Two-dimensional (2D) semiconducting materials like InSe have attracted considerable attention in the photoelectric detection field due to their outstanding properties, such as a large tunable bandgap, high carrier mobility, low electron effective mass and high absorption coefficient. In this work, a mixed-dimensional van der Waals heterostructure (MvdWH)-based photodetector combining graphene quantum dots (GQDs) with InSe was fabricated. The GQD/InSe MvdWH photodetector achieved a high responsivity of 27.48 A W−1 and a large detectivity of 1.2 × 1012 Jones at 635 nm, a sixty-fold increase compared to the pure InSe devices. The significant enhancement in photoresponsive performances can be attributed to the p-type doping effect and efficient charge transfer from GQDs to InSe. The novel 0D/2D van der Waals heterojunctions offer tremendous opportunities in high-performance photodetectors.

Graphical abstract: Ultrasensitive photodetectors based on graphene quantum dot-InSe mixed-dimensional van der Waals heterostructures

Supplementary files

Article information

Article type
Paper
Submitted
14 محرم 1444
Accepted
20 ربيع الثاني 1444
First published
22 ربيع الثاني 1444

J. Mater. Chem. C, 2022,10, 18174-18181

Ultrasensitive photodetectors based on graphene quantum dot-InSe mixed-dimensional van der Waals heterostructures

S. Song, J. Qiao, M. Shen, G. Zhang, F. Feng and M. G. Somekh, J. Mater. Chem. C, 2022, 10, 18174 DOI: 10.1039/D2TC03395J

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