Issue 30, 2022

Bias-dependent hole transport through a multi-channel silicon nanowire transistor with single-acceptor-induced quantum dots

Abstract

Quantum transport in multi-channel silicon nanowire transistors presents enhanced data capacity and driving ability by overlapping current, which are essential for constructing quantum logic platforms. However, the overlapping behavior of the quantum transport through multi-channels remains elusive. Herein, we demonstrated bias-dependent hole transport spectroscopy from zero-dimensional (0D) to one-dimensional (1D) features in a lightly boron-doped multi-channel silicon nanowire transistor. The evolution of the initial 0D conductance peak splitting with source/drain bias voltages reveals the statistically distributed positions of single dopant atoms in multi-channels relative to the source or drain side. Two sets of 1D subbands are determined separately for heavy and light holes with different effective masses by measuring the positions of transconductance valleys, which have a negative shift with increasing bias voltage. Our results will benefit the practical utilization of silicon-based devices with atomic-level functionality in the field of quantum computation.

Graphical abstract: Bias-dependent hole transport through a multi-channel silicon nanowire transistor with single-acceptor-induced quantum dots

Supplementary files

Article information

Article type
Paper
Submitted
24 رمضان 1443
Accepted
15 ذو الحجة 1443
First published
16 ذو الحجة 1443

Nanoscale, 2022,14, 11018-11027

Bias-dependent hole transport through a multi-channel silicon nanowire transistor with single-acceptor-induced quantum dots

J. Chen, W. Han, Y. Zhang, X. Zhang, Y. Ge, Y. Guo and F. Yang, Nanoscale, 2022, 14, 11018 DOI: 10.1039/D2NR02250H

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