Issue 25, 2021

Fabrication of a γ-In2Se3/Si heterostructure phototransistor for heart rate detection

Abstract

A γ-In2Se3/Si heterostructure phototransistor with a broadened photoresponse has been developed, presenting a responsivity, specific detectivity and response speed of 10.24 A W−1, 8.63 × 1012 Jones and 0.76/0.85 ms (rise time/fall time) at 450 nm, respectively. The high responsivity could be attributed to the depressed dark current of the γ-In2Se3 nanofilm and the high gain arising from the gating effect of the phototransistor. Further analysis reveals that the relatively high responsivity and fast response speed facilitate the application of the device in real-time and accurate health monitoring, such as heart rate detection.

Graphical abstract: Fabrication of a γ-In2Se3/Si heterostructure phototransistor for heart rate detection

Supplementary files

Article information

Article type
Communication
Submitted
09 رمضان 1442
Accepted
28 شوال 1442
First published
29 شوال 1442

J. Mater. Chem. C, 2021,9, 7888-7892

Fabrication of a γ-In2Se3/Si heterostructure phototransistor for heart rate detection

Y. Zhang, M. Wang, K. Cao, C. Wu, C. Xie, Y. Zhou and L. Luo, J. Mater. Chem. C, 2021, 9, 7888 DOI: 10.1039/D1TC01837J

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