Issue 45, 2020

Origin of the 29Si NMR chemical shift in R3Si–X and relationship to the formation of silylium (R3Si+) ions

Abstract

The origin in deshielding of 29Si NMR chemical shifts in R3Si–X, where X = H, OMe, Cl, OTf, [CH6B11X6], toluene, and OX (OX = surface oxygen), as well as iPr3Si+ and Mes3Si+ were studied using DFT methods. At the M06-L/6-31G(d,p) level of theory the geometry optimized structures agree well with those obtained experimentally. The trends in 29Si NMR chemical shift also reproduce experimental trends; iPr3Si–H has the most shielded 29Si NMR chemical shift and free iPr3Si+ or isolable Mes3Si+ have the most deshielded 29Si NMR chemical shift. Natural localized molecular orbital (NLMO) analysis of the contributions to paramagnetic shielding (σp) in these compounds shows that Si–R (R = alkyl, H) bonding orbitals are the major contributors to deshielding in this series. The Si–R bonding orbitals are coupled to the empty p-orbital in iPr3Si+ or Mes3Si+, or to the Image ID:d0dt02099k-t1.gif orbital in R3Si–X. This trend also applies to surface bound R3Si–OX. This model also explains chemical shift trends in recently isolated tBu2SiH2+, tBuSiH2+, and SiH3+ that show more shielded 29Si NMR signals than R3Si+ species. There is no correlation between isotropic 29Si NMR chemical shift and charge at silicon.

Graphical abstract: Origin of the 29Si NMR chemical shift in R3Si–X and relationship to the formation of silylium (R3Si+) ions

Supplementary files

Article information

Article type
Paper
Submitted
20 شوال 1441
Accepted
09 ذو الحجة 1441
First published
10 ذو الحجة 1441

Dalton Trans., 2020,49, 16453-16463

Author version available

Origin of the 29Si NMR chemical shift in R3Si–X and relationship to the formation of silylium (R3Si+) ions

W. Huynh and M. P. Conley, Dalton Trans., 2020, 49, 16453 DOI: 10.1039/D0DT02099K

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