Issue 25, 2020

Implementation of an electrically modifiable artificial synapse based on ferroelectric field-effect transistors using Al-doped HfO2 thin films

Abstract

Human brain-like synaptic behaviors of the ferroelectric field-effect transistors (FeFETs) were emulated by introducing the metal–ferroelectric–metal–insulator–semiconductor (MFMIS) gate stacks employing Al-doped HfO2 (Al:HfO2) ferroelectric thin films even at a low operation voltage. The synaptic plasticity of the MFMIS-FETs could be gradually modulated by the partial polarization characteristics of the Al:HfO2 thin films, which were examined to be dependent on the applied pulse conditions. Based on the ferroelectric polarization switching dynamics of the Al:HfO2 thin films, the proposed devices successfully emulate biological synaptic functions, including excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), and spike timing-dependent plasticity (STDP). The channel conductance of the FeFETs could be controlled by partially switching the ferroelectric polarization of the Al:HfO2 gate insulators by means of pulse-number and pulse-amplitude modulations. Furthermore, the 3 × 3 array integrated with the Al:HfO2 MFMIS-FETs was also fabricated, in which electrically modifiable weighted-sum operation could be well verified in the 3 × 3 synapse array configuration.

Graphical abstract: Implementation of an electrically modifiable artificial synapse based on ferroelectric field-effect transistors using Al-doped HfO2 thin films

Supplementary files

Article information

Article type
Paper
Submitted
01 شعبان 1441
Accepted
04 شوال 1441
First published
04 شوال 1441

Nanoscale, 2020,12, 13421-13430

Implementation of an electrically modifiable artificial synapse based on ferroelectric field-effect transistors using Al-doped HfO2 thin films

S. Yoon, S. Moon and S. Yoon, Nanoscale, 2020, 12, 13421 DOI: 10.1039/D0NR02401E

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements