Issue 13, 2019

Large area perovskite light-emitting diodes by gas-assisted crystallization

Abstract

Halide perovskites have been gaining considerable attention recently for use in light-emitting applications, due to their bandgap tunability, color purity and low cost fabrication methods. However, current fabrication techniques limit the processing to small-area devices. Here, we show that a facile N2 gas-quenching technique can be used to make methylammonium lead bromide-based perovskite light-emitting diodes (PeLEDs) with a peak luminance of 6600 cd m−2 and a current efficiency of 7.0 cd A−1. We use this strategy to upscale PeLEDs to large-area substrates (230 cm2) by developing a protocol for slot-die coating combined with gas-quenching. The resulting large area devices (9 devices of each 4.46 cm2 per substrate) with three slot-die coated layers exhibit uniform emission with a peak luminance of 550 cd m−2 and a current efficiency of 2.6 cd A−1. The reasons for the reduced performance and improvement routes are discussed. These results mark a vital step towards scalable manufacturing techniques for PeLEDs.

Graphical abstract: Large area perovskite light-emitting diodes by gas-assisted crystallization

Supplementary files

Article information

Article type
Paper
Submitted
15 ربيع الثاني 1440
Accepted
20 جمادى الثانية 1440
First published
20 جمادى الثانية 1440

J. Mater. Chem. C, 2019,7, 3795-3801

Large area perovskite light-emitting diodes by gas-assisted crystallization

V. Prakasam, D. Tordera, F. Di Giacomo, R. Abbel, A. Langen, G. Gelinck and H. J. Bolink, J. Mater. Chem. C, 2019, 7, 3795 DOI: 10.1039/C8TC06482B

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