Electronic properties of tin iodide hybrid perovskites: effect of indium doping

Abstract

Indium doping is introduced to tune the electronic properties of tin iodide hybrid perovskites. By applying this method, the resistivity of tin-iodide-based hybrid perovskites is reduced using indium doping without any change in its band gap. This mixed tin/indium iodide crystal perovskite is obtained using a solution process. The resistivity of the materials continuously increased from 10⁻² to 10⁻¹ Ω cm at room temperature, even when the doping level was less than 22 ppm. The metallic nature of this system decreased with increasing doping level, while the carrier density did not vary with the doping level. This method of foreign metal doping provides resistivity control of the tin iodide hybrid cubic perovskites without changing the band gap or carrier concentration.