Issue 17, 2016

Black phosphorus nonvolatile transistor memory

Abstract

We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (104 s), and cyclic endurance (1000 cycles).

Graphical abstract: Black phosphorus nonvolatile transistor memory

Supplementary files

Article information

Article type
Communication
Submitted
11 ማርች 2016
Accepted
28 ማርች 2016
First published
31 ማርች 2016

Nanoscale, 2016,8, 9107-9112

Black phosphorus nonvolatile transistor memory

D. Lee, Y. Choi, E. Hwang, M. S. Kang, S. Lee and J. H. Cho, Nanoscale, 2016, 8, 9107 DOI: 10.1039/C6NR02078J

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