Issue 46, 2022

Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides

Abstract

We demonstrate a novel electroluminescence device in which GaN-based μ-LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are deposited directly on the μ-LED surface. A special μ-LED design enables the operation of our structures even within the limit of low temperatures. A device equipped with a selected WSe2 monolayer flake is shown to act as a stand-alone, electrically driven single-photon source.

Graphical abstract: Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides

Article information

Article type
Paper
Submitted
19 ጁላይ 2022
Accepted
09 ኖቬም 2022
First published
10 ኖቬም 2022

Nanoscale, 2022,14, 17271-17276

Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides

K. Oreszczuk, J. Slawinska, A. Rodek, M. Potemski, C. Skierbiszewski and P. Kossacki, Nanoscale, 2022, 14, 17271 DOI: 10.1039/D2NR03970B

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements