Modulation of the near-infrared-I and -II luminescence of thulium-incorporated lead-free double perovskites

Jingheng Nie a, Weitao Ying *b, Renping Cao a, Sijie Liu a, Shaobin Qiu c, Chaohong Liao a, Xiangyan Yun d, Bang Lan *a and Jing Wang *ae
aNortheast Guangdong Key Laboratory of New Functional Materials, School of Chemistry and Environment, Jiaying University, Meizhou, 514015, P. R. China. E-mail: jyulb6@163.com; ceswj@mail.sysu.edu.cn
bDepartment of Chemistry, Hengshui University, Hengshui, Hebei 053500, P. R. China. E-mail: 601706@hsnc.edu.cn
cSchool of Physics and Electrical Engineering, Jiaying University, Meizhou, 514015, P. R. China
dInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
eMinistry of Education Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou, Guangdong 510275, P. R. China

Received 16th July 2024 , Accepted 28th August 2024

First published on 30th August 2024


Abstract

Currently, lanthanide-doped metal halide perovskites with near-infrared (NIR) luminescence are receiving considerable attention. However, they suffer from low NIR efficiency, particularly in the NIR-II emission range, and are primarily excited by high-energy ultraviolet light. In this work, high-performance NIR-I and -II emissions were realized by co-doping a Cs2NaInCl6 lattice with Tm3+ ions as luminescent emitters and Sb3+ and Te4+ ions as sensitizer ions, where Sb3+ ions can enable short-wavelength high-energy excitation and Te4+ ions can enable long-wavelength blue-light excitation. The NIR photoluminescence quantum yield (PLQY) reaches an unprecedented 58.0% in Cs2NaInCl6:Sb3+/Tm3+ (NIR-II emission: 1224 nm–48.9%), which is attributed to the presence of the 1G4 energy level of the Tm3+ ion acting as a bridge, efficiently transferring energy from high-energy states of Sb3+ to NIR-emissive states. Moreover, Tm3+ ions can be sensitized by Te4+ ions that have broadband absorption in the blue region, which enable a high NIR PLQY of 10.3% in Cs2NaInCl6:Te4+/Tm3+ under 420 nm excitation. The excellent NIR luminescence performance combined with excellent environmental stability endows Cs2NaInCl6:Sb3+/Tm3+ and Cs2NaInCl6:Te4+/Tm3+ with considerable potential for application in night-vision devices.


Introduction

Near-infrared-I (NIR-I: 700–1000 nm) and near-infrared-II (NIR-II: 1000–1400 nm) luminescence is crucial in various fields related to human activities due to their low thermal effect, nondestructive nature, and suitable penetration.1–4 The prevailing commercial NIR light sources including halogen and tungsten lamps are plagued by multiple shortcomings such as low efficiency, bulky design, and brief operational lifespans, providing the impetus for developing new high-performance NIR emitters.5,6 Traditionally, trivalent chromium (Cr3+ ion)-doped phosphors have been considered desirable NIR emitters; however, most of the reported Cr3+ emissions only partially cover the NIR region, and the rest of them are located within the far-red region.7–12 Nevertheless, lanthanide (Ln3+) doping enables them to emit various wavelengths of the NIR regions, taking advantage of their abundant metastable excitation energy levels.13–15 In particular, for emerging optical communication technologies, NIR emissions at around 1.2 μm for the 3H53H6 electron transition of Tm3+ ions are more attractive. Several of these Ln3+-doped NIR emitters have been successfully commercialized. However, Ln3+-doped NIR emitters generally suffer from weak light absorption confined by forbidden f–f transitions.16,17 Therefore, sensitizing Ln3+ luminescence by constructing appropriate energy transfer channels is expected to be an effective strategy to achieve efficient NIR-I and NIR-II emissions.

Recently, lead-free metal halide double perovskites have been explored as hosts for doping with Ln3+ to generate NIR photoluminescence (PL), which has gained tremendous interest for extensive research in the field of photoelectric materials,18–24 since halide double perovskites can provide octahedral coordination (CN = 6), which is beneficial for Ln3+ incorporation. For example, Nag et al. doped Yb3+/Er3+ into Cs2AgInCl6 double perovskites, and the NIR emissions at 994 and 1550 nm from doped ions were realized.25 Unfortunately, the NIR PL quantum yield (PLQY) of these Ln3+-doped Cs2AgInCl6 is not satisfactory owing to the inefficient energy transfer. Although many studies have reported the sensitization and enhancement of Ln3+-related NIR emission by the energy transfer from self-trapped excitons (STEs) to Ln3+ ions, the sensitization efficiency and luminescence of Ln3+ ions are low and weak because STEs take away part of the absorbed energy and cannot efficiently transfer their energy to Ln3+ ions. Due to the lack of resonance condition (limited overlap between STE emission and Ln3+ absorption profiles), tuning the emission spectra of the sensitized centers for better resonance with suitable Ln3+ ions is well worth exploring. Currently, the NIR-II emission of Ln3+ ions in reported double perovskites still suffers from the problems of low efficiency and high-energy ultraviolet light excitation, which considerably hinders their further application.21,22,26,27 In this regard, it remains an important material design challenge to modulate the excitation and emission energies while investigating and optimizing the energy transfer efficiency in conjunction with the different energy level structures of Ln3+ ions to improve the power conversion efficiency of such NIR-II emitters.

In this work, high-performance NIR-I and NIR-II light was realized by co-doping Tm3+ and sensitizer ions (Sb3+ and Te4+) into a Cs2NaInCl6 lattice where Sb3+ ions can enable short-wavelength high-energy excitation and Te4+ ions can enable long-wavelength low-energy excitation. Through Sb3+ sensitization, efficient NIR-I emission at 808 nm and NIR-II emission at 1224 nm with a high NIR PLQY of up to 58.0% was realized in Cs2NaInCl6:Sb3+/Tm3+ under 320 nm excitation. The energy transfer efficiency in the Sb3+/Tm3+ co-doped sample is up to 56.1%, which may be attributed to the relatively large overlap between Sb3+ emission and Tm3+ absorption profiles. The presence of the 1G4 energy level of the Tm3+ ion acts as a bridge, facilitating the transfer of energy from Sb3+ to Tm3+. Based on the sensitization of Te4+ ions, similar NIR emissions with a high NIR PLQY of up to 10.3% have been realized in Cs2NaInCl6:Te4+/Tm3+ under blue light 420 nm excitation. The experiments and DFT calculations reveal the origin of the luminescence and demonstrate the possibility of energy transfer. Profiting from the efficient energy transfer channels, highly efficient NIR-I and NIR-II emissions of Tm3+ ions can be realized. The excellent NIR-I and NIR-II luminescence performance combined with excellent environmental stability endows Cs2NaInCl6:Sb3+/Tm3+ and Cs2NaInCl6:Te4+/Tm3+ with great potential for application in night-vision devices. This work provides inspiration for the design of excitation state modulation and efficient NIR-emitting Ln3+-doped halide perovskites, demonstrating their considerable potential as NIR LEDs for night vision technologies and other related fields.

Results and discussion

The Cs2NaInCl6 double perovskite is environmentally friendly and serves as an excellent host material owing to the wide bandgap that does not interact with most of the ultraviolet-visible radiation, resulting in photostability. We obtained Tm3+-doped halide double crystals by a hydrothermal method. The corresponding structures of Cs2NaInCl6 and Cs2NaInCl6:Tm3+–Sb3+ (or Te4+) double perovskites are shown in Fig. 1a, where Tm3+, Sb3+, and Te4+ randomly occupy the position of In3+ when doped into the lattice. The powder X-ray diffraction (XRD) patterns of the samples show that the XRD patterns of Cs2NaInCl6:Sb3+/Tm3+ and Cs2NaInCl6:Te4+/Tm3+ samples can correspond well to the standard card (ICSD#132718), as shown in Fig. 1b. The diffraction peaks of Sb3+/Tm3+ or Te4+/Tm3+-doped samples shift toward a lower angle as the Tm3+ concentration increases, as shown in Fig. S1. This shift occurs because the ionic radius of Tm3+ (88 pm) is larger than that of In3+ (80 pm), which indicates that Tm3+ was successfully doped into the lattice. The actual doping concentrations were determined by inductively coupled plasma mass spectrometry (ICP-MS), and the results are listed in Tables S1 and S2.
image file: d4qi01772b-f1.tif
Fig. 1 (a) Structural schematic diagram of Cs2NaInCl6, Cs2NaInCl6:Sb3+/Tm3+, and Cs2NaInCl6:Te4+/Tm3+ double perovskites. (b) XRD patterns of pure, 5%Sb3+/30%Tm3+, and 1%Te4+/30%Tm3+ doped Cs2NaInCl6.

The PL excitation (PLE) and PL spectra of Cs2NaInCl6 doped with different types of ions are studied to explore the luminescence properties of Tm3+ ion-doping systems. The PLE spectra of both Sb3+ and Sb3+/Tm3+-doped Cs2NaInCl6 samples have a strong excitation band at around 320 nm (Fig. 2a), corresponding to the 1S03P1 transition of Sb3+.28,29 The Sb3+ single-doped Cs2NaInCl6 samples exhibit a broadband blue emission at 450 nm under 320 nm excitation, while Sb3+/Tm3+-doped Cs2NaInCl6 samples exhibit considerable NIR-I emission peaks at 808 nm, where the 808 nm NIR-I emission is attributed to the f–f transition process of Tm3+ ions.27 The doping of Tm3+ ions can induce the NIR luminescence of Cs2NaInCl6 perovskite materials. The PL/PLE pseudo-color maps demonstrate that the excited state origin of these emission bands was the same (Fig. 2c), suggesting that the NIR luminescence of Tm3+ ions primarily depends on the sensitization of Sb3+ ions.


image file: d4qi01772b-f2.tif
Fig. 2 (a) PLE and PL spectra of 5%Sb3+ and 5%Sb3+/60%Tm3+-doped Cs2NaInCl6. (b) PLE and PL spectra of 1%Te4+ and 1%Te4+/50%Tm3+-doped Cs2NaInCl6. The PLE/PL mapping of (c) 5%Sb3+/60%Tm3+ and (d) 1%Te4+/50%Tm3+-doped Cs2NaInCl6.

Although NIR luminescence can be achieved in the Sb3+/Tm3+ systems, the excitation energy is high; therefore, we introduced other sensitizers to modulate the excitation wavelength. The PLE spectra of Cs2NaInCl6 samples doped with Te4+ and Te4+/Tm3+ exhibit similar excitation bands, with the optimal excitation wavelength appearing at 437 nm (Fig. 2b). The PLE peak closely agrees with the absorption spectrum and has a strong absorption cross-section with the addition of sensitizers (Fig. S2). The Te4+ singly doped Cs2NaInCl6 sample exhibits a broadband emission at 620 nm under 437 nm excitation with a full width at half maximum of 152 nm, which was attributed to the Te4+-state via3P0,11S0 transition or related STE emission.30,31 The Te4+/Tm3+-doped Cs2NaInCl6 sample demonstrates an additional NIR-I emission peak at 808 nm, which is attributed to the electronic transition process of Tm3+ ions. Accordingly, the NIR emission exhibited a millisecond-scale lifetime of 2.91 ms for Sb3+/Tm3+ and 3.23 ms for Te4+/Tm3+ (Fig. S3), which is attributed to Laporte forbidden f–f transitions. The introduction of Tm3+ ions could reduce the broadband emission intensity (500–800 nm) while generating NIR emission. The PL/PLE pseudo-color maps confirm that the excited state origin of these emission bands was the same (Fig. 2d), indicating that the energy transfer process through Te4+ is the main pathway to achieve NIR emission of Tm3+ ions.

In addition to introducing Te4+ ion sensitizers to achieve long-wavelength excitation, we introduced other ions in addition to the original Sb3+/Tm3+ doping to modulate the excited state of Sb3+. After introducing Bi3+ ions, the PLE of Cs2NaInCl6:Sb3+/Bi3+/Tm3+ splits further, with the splitting width caused by the Jahn–Teller deformation increasing with Bi3+ ion concentration (Fig. S4). With the increase in Bi3+ ion doping concentration, the excitation peak can be effectively modulated from 330 to 360 nm, although the luminescence intensity is slightly reduced, as shown in Fig. S5. Furthermore, the introduction of Bi3+ into the Te4+/Tm3+ system did not change the spectra, and the excitation peaks were consistent with those of Te4+ and the Te4+/Tm3+ doping systems (Fig. S6), indicating that the introduction of Bi3+ did not modulate the excited state of Te4+.

To explore the effect of Tm3+ ion doping concentration on the luminescence performance of samples, the emission spectra of Cs2NaInCl6:Sb3+/Tm3+ and Cs2NaInCl6:Te4+/Tm3+ are recorded at different Tm3+ ion doping concentrations (Fig. 3a and b). Cs2NaInCl6:Sb3+ only demonstrates a strong broadband blue emission peak, which could be attributed to the inter-configurational transitions of Sb3+ dopants.26,32 After introducing Tm3+ ions, the PL spectra exhibit a distinct NIR-I emission peak attributed to the 3H43H6 electron transition process of Tm3+ ions under ultraviolet (UV) light excitation. The detailed trends of blue and NIR-I emission intensities of the Cs2NaInCl6:Sb3+/Tm3+ sample with the increase in Tm3+ doping concentration are shown in Fig. 3c. Under excitation of 320 nm, the NIR emission of Tm3+ ions gradually increased with the increase in Tm3+ concentration. However, the intensity of the blue emission of Sb3+ decreases, indicating the presence of energy transfer process from Sb3+ to Tm3+ in Cs2NaInCl6 perovskites. Similarly, the Cs2NaInCl6:Te4+/Tm3+ sample exhibits a NIR-I emission peak at 808 nm (Tm3+: 3H43H6) on the basis of the broadband emission peak of Te4+ with the introduction of Tm3+ ions. As shown in Fig. 3d, the Te4+ emission intensity decreased, while the NIR emission intensity greatly increases for up to 50% Tm3+ doping. Higher doping concentrations lead to a decrease in NIR efficiency, which is caused by concentration quenching.


image file: d4qi01772b-f3.tif
Fig. 3 PL spectra of (a) Cs2NaInCl6:Sb3+/Tm3+ and (b) Cs2NaInCl6:Te4+/Tm3+ with different Tm3+ ion concentrations, (c) 450 nm and 808 nm emission intensity of Cs2NaInCl6:Sb3+/Tm3+ samples, and (d) 620 nm and 808 nm emission intensity of Cs2NaInCl6:Te4+/Tm3+ samples.

In addition to the NIR-I emission at 808 nm, we found that the Tm3+ ion-doped samples exhibited intense NIR-II emissions at 1224 nm, which was attributed to the 3H53H6 electron transition process of Tm3+ ions. As shown in Fig. 4a, the NIR-II emission intensity considerably increases for up to 60% Tm3+ doping. The PLE spectra of NIR-II emission show the same profiles, which indicate that the NIR-II emission could originate from Sb3+ ions (Fig. 4b). The NIR emission spectra were almost constant with the variation in the excitation wavelength (Fig. 4c), indicating that the NIR-II luminescence of Tm3+ ions primarily depends on the sensitization of Sb3+ ions. Similarly, the Te4+/Tm3+-codoped Cs2NaInCl6 exhibited the same NIR-II emission, with the NIR-II emission intensity increasing for up to 50% Tm3+ doping, as shown in Fig. 4d. The PLE spectra of NIR-II emission show the same profiles, indicating that the NIR-II emission could originate from Te4+ ions (Fig. 4e). The PL and PLE pseudo-color maps confirm that the NIR-II emission is realized by an energy transfer process from Te4+ to Tm3+ ions (Fig. 4f). The highest NIR-II emission of Sb3+/Tm3+-codoped samples with a PLQY up to 48.9% was obtained when the Tm3+ ion feed concentration was 60%, as shown in Fig. S7. Similarly, Te4+/Tm3+-codoped Cs2NaInCl6 also demonstrated a high NIR-II PLQY of up to 8.3% when the Tm3+ ion feed concentration was 50% (Fig. S8). Based on the sensitization of Sb3+ or Te4+ ions, the NIR-II emission intensity of Sb3+/Tm3+ and Te4+/Tm3+ co-doped samples exhibited a huge improvement compared to the Tm3+ singly doped sample (Fig. 4b and d). The PLQY of NIR (NIR-I and NIR-II) emissions of Sb3+/Tm3+-codoped samples was up to 58.0%, while the NIR of Te4+/Tm3+-codoped samples showed a PLQY as high as 10.3%, showing excellent NIR luminescence performance. Note that the PLQY of NIR emission of this Sb3+/Tm3+-codoped Cs2NaInCl6 reaches the unprecedented 58.0%, which is the record in reported all-inorganic lead-free halide perovskites with a narrow NIR-II emission band (Table 1).


image file: d4qi01772b-f4.tif
Fig. 4 (a) NIR-II emission spectra of Cs2NaInCl6:Sb3+/Tm3+. (b) PLE spectra of Cs2NaInCl6:5%Sb3+/60%Tm3+; PL spectra of Cs2NaInCl6:60%Tm3+ and Cs2NaInCl6:5%Sb3+/60%Tm3+. (c) Contour plot of the excitation-dependent NIR-II emission of Cs2NaInCl6:5%Sb3+/60%Tm3+. (d) NIR-II emission spectra of Cs2NaInCl6:1%Te4+/50%Tm3+. (e) PLE spectra of Cs2NaInCl6:1%Te4+/50%Tm3+; PL spectra of Cs2NaInCl6:50%Tm3+ and Cs2NaInCl6:1%Te4+/50%Tm3+. (f) Contour plot of the excitation-dependent NIR-II emission of Cs2NaInCl6:1%Te4+/50%Tm3+.
Table 1 Summary of the PL characteristics of NIR-emission lead-free metal halides
Compound PLQY [%] Excitation wavelength [nm] Emission wavelength [nm] Ref.
Cs2AgBiCl6:Yb3+ 365 1000 33
Cs2AgInCl6:Yb3+ 3.6 300 996 34
Cs2AgBiBr6:Yb3+ 28.0 430 1000 35
Cs2Ag0.2Na0.8BiCl6:Yb3+ 19.0 360 995 36
Cs2Ag0.2Na0.8BiCl6:Er3+ 4.3 360 1540
Cs2ZrCl6:Te4+/Yb3+ 0.2 392 1002 37
Cs2ZrCl6:Te4+/Er3+ 6.1 392 1539
Cs4MnBi2Cl12:Yb3+ 1.4 360 1000 38
Cs2NaBiCl6:Mn2+/Er3+ 14.2 360 1540 39
Cs2AgInCl6:Cr3+ 22.0 760 1010 40
Cs2AgInCl6:Cr3+/Yb3+ 45.0 365 1000 41
Cs2NaSbCl6:Er3+ 0.3 335 1543 42
Cs2NaScCl6:Er3+ 28.3 365 1540 43
Cs2NaInCl6:Sb3+/Tm3+ 58.0 320 808, 1224 This work
Cs2NaInCl6:Te4+/Tm3+ 10.3 420 808, 1224


To determine the interaction between Tm3+ and Sb3+ (or Te4+) dopants and the regulatory effect of Tm3+ on NIR emission, the PLE spectra of the Sb3+/Tm3+-doped sample monitored at 450, 808 and 1224 nm and the PLE spectra of the Te4+/Tm3+-doped sample monitored at 620, 808 and 1224 nm were recorded (Fig. S9). The PLE spectra of the Cs2NaInCl6:Sb3+/Tm3+ sample at 450, 808 and 1224 nm were comparable (with the same excitation bands at 320 and 333 nm), providing evidence for the energy transfer from Sb3+ to Tm3+ ions.14,44 Similar phenomena are observed in the PLE spectra of the Cs2NaInCl6:Te4+/Tm3+ sample, indicating the presence of an energy transfer process. As shown in Fig. S9, a weak narrow excitation peak at 470 nm, which is attributed to the direct excitation of Tm3+ ions (3H61G4 transition), was observed. As shown in Fig. S10, the PL spectra of the Cs2NaInCl6:Sb3+/Tm3+ or Cs2NaInCl6:Te4+/Tm3+ sample display that the clear NIR emission peak still appears at different excitation wavelengths. The PLE spectra of visible and NIR emissions were comparable, which indicated that the excited state origin of these emission bands was the same. The emission of Tm3+ ions with f–f transitions is usually sensitive to the excitation wavelength, while the emission spectra are almost constant with the change in excitation wavelength, indicating that the NIR luminescence of Tm3+ ions mainly depends on the sensitization of Sb3+ or Te4+ ions. Moreover, the excitation intensity at 470 nm was lower than the excitation band of Sb3+ or Te4+ ions, indicating that the Tm excitation through the energy transfer was more efficient than direct excitation. Therefore, the energy transfer process through the ns2 ion is the significant main pathway to achieve NIR emission of Tm3+ ions.

To determine the energy transfer process of Cs2NaInCl6:Sb3+/Tm3+ and Cs2NaInCl6:Te4+/Tm3+ samples, the time-resolved PL of ns2 emissions were measured. As shown in Fig. 5a–d, the PL lifetimes monitored at 450 or 620 nm decreased with the increase in Tm3+ content (Tables S3 and S4), indicating that the improved energy transfer from the ns2 (at the [SbCl6]3− or [TeCl6]2− octahedron) to the Tm3+ ions promoted the decay of the ns2 emission. The energy transfer efficiency (ηT) in the can be expressed as follows:45

 
image file: d4qi01772b-t1.tif(1)
where τ0 is the lifetime of ns2 emission in the absence of Tm3+ ions and τx is the lifetime with different Tm3+ concentrations. The ηT values increase with the concentration of Tm3+ ions, reaching up 56.1% at 5%Sb3+/70%Tm3+ doping and 43.7% at 1%Te4+/70%Tm3+ doping (Fig. 5c and d). The efficient energy transfer efficiency can be attributed to the presence of Tm3+ and Sb3+ or Te4+ ions occupying the In3+ sites in the Cs2NaInCl6 lattice. This results in a reduced distance between the Sb3+ or Te4+ sensitizer and the Tm3+ activator, thereby favoring the occurrence probability of the energy transfer process. Moreover, for Cs2NaInCl6:Sb3+/Tm3+, a relatively large overlap between ns2 emission and Tm3+ absorption profile (Fig. S11) and a slight relaxation will facilitate the transfer of energy from Sb3+ to Tm3+. The presence of the 1G4 energy level (∼470 nm) of Tm3+ ions is close to the emission of Sb3+ (∼450 nm), which can act as a bridge to achieve a highly efficient energy transfer efficiency.


image file: d4qi01772b-f5.tif
Fig. 5 PL lifetimes of (a) Cs2NaInCl6:Sb3+/Tm3+ and (b) Cs2NaInCl6:Te4+/Tm3+. PL lifetimes (450 or 620 nm) and energy transfer efficiency as a function of Tm3+ concentration in (c) Cs2NaInCl6:Sb3+/Tm3+ and (d) Cs2NaInCl6:Te4+/Tm3+. (e) Energy-level diagram of Sb3+/Tm3+ and Te4+/Tm3+ co-doped Cs2NaInCl6 and the proposed luminescence mechanism.

According to the above-mentioned investigations, the possible PL mechanism for Cs2NaInCl6:Sb3+/Tm3+ and Cs2NaInCl6:Te4+/Tm3+ is presented in Fig. 5e. For Cs2NaInCl6:Sb3+/Tm3+, the electrons can be excited from the ground state to the excited states of Sb3+ ions under 320 nm UV excitation, and then undergo a dynamic Jahn–Teller distortion, leading to broadband blue emission. After Bi3+ codoping, there is an increase in the splitting width of the PLE band, which can reduce the excitation energy to 330–390 nm range. The energy is then transferred to Tm3+ ions through the energy transfer channel from Sb3+ to Tm3+ ions, which results in the intrinsic emission of Tm3+ ions, achieving a blue emission at 470 nm (Tm3+: 1G43H6), an NIR-I emission at 808 nm (Tm3+: 3H43H6), and an NIR-II emission at 1224 nm (Tm3+: 3H53H6). Similarly, the electrons in the ground state of the Cs2NaInCl6:Te4+/Tm3+ sample are excited to the excited state under low-energy blue light excitation, emitting a broadband emission at 500–800 nm through the inter-configurational transitions. Meanwhile, some of the electrons are transferred to the 3H4 and 3H5 levels of Tm3+ ions, achieving an NIR-I emission at 808 nm and an NIR-II emission at 1224 nm. The doping of Tm3+ ions provides a pathway for efficient NIR-I and NIR-II emissions, while the selection of Sb3+ or Te4+ offers diverse sensitization routes.

To further unveil the photophysics process, density functional theory (DFT) calculations were carried out to determine the electronic structure of the Cs2NaInCl6:Sb3+/Tm3+ and Cs2NaInCl6:Te4+/Tm3+ systems, which are shown in Fig. 6. For the undoped Cs2NaInCl6 system, the conduction band minimum (CBM) is mainly composed of Cl p states and In s states, while the valence-band maximum (VBM) mainly consists of Cl p orbitals, as shown in Fig. S12. In the Sb-doped system, a new band composed of the Sb lone-pair s states and Cl p states appears above the host valence band, while the SbCl6 CBM emerges in a gap deep in the host conduction band, as shown in Fig. 6a. Similarly, the Te s states and Cl p states appear above the host valence band, while the TeCl6 CBM emerges in front of the host conduction band (Fig. 6b). The SbCl6 CBM–VBM gap (∼3.7 eV) is higher than the TeCl6 CBM–VBM gap (∼3.3 eV), which matches the experimental results (a higher excitation energy for Sb than for Te). The calculations confirmed that the observed visible emission band originated from [SbCl6] or [TeCl6] octahedrons, respectively. Furthermore, as shown in Fig. 6c and d, the 4f bands of Tm are located in the CBM–VBM of SbCl6 or TeCl6, providing the possibility for the realization of energy transfer. These calculation results demonstrate that the introduced sensitizer Sb3+ or Te4+ ions can modulate the host electronic structure, while the introduced Tm3+ ions are located in the CBM–VBM of SbCl6 or TeCl6, which confirms the possibility of energy transfer.


image file: d4qi01772b-f6.tif
Fig. 6 Density of states (DOS) of (a) Cs2NaInCl6:Sb3+, (b) Cs2NaInCl6:Te4+, (c) Cs2NaInCl6:Sb3+/Tm3+, and (d) Cs2NaInCl6:Te4+/Tm3+.

To demonstrate the potential application of the NIR emission of Cs2NaInCl6:Sb/Tm and Cs2NaInCl6:Te/Tm materials, the simple NIR detection system is designed, as shown in Fig. 7a. The prepared Cs2NaInCl6:Sb3+/Tm3+ samples were coated on a commercially available 310 nm UV-LED chip, while the Cs2NaInCl6:Te4+/Tm3+ samples were coated on a commercially available 410 nm LED chip. The as-fabricated LED devices exhibited intense NIR luminescence, as shown in Fig. 7b. The intense NIR emissions demonstrate great potential in night vision applications, in which the photographs printed paper upon illumination with the NIR-LEDs as shown in Fig. 7c. Under natural light, photographs of the “Jiaying University” pattern were obtained using a visible camera. No image was captured by the cameras when the LEDs were off. In contrast, black-and-white images were recorded using an NIR camera when the NIR LEDs were ignited. The fabricated NIR LED can also be used for night vision surveillance and penetration applications by virtue of the unique spectral characteristics of NIR-II light, such as being invisible to the naked eye and special penetration ability. Under natural light, part of the emission band covered by the 750 nm filter was not detected by the visible camera. When the NIR LED is turned on, the obscured hand is clear in the NIR camera (Fig. 7d). Furthermore, the strong NIR emission enables a clear fruit image by the NIR camera under the irradiation of an NIR LED lamp, which reveals the great potential of the prepared samples in night vision technologies and other related fields. The Tm3+-doped NIR materials also exhibit excellent environmental stability, which does not degrade significantly after 2 months, and the luminescence intensity is basically consistent with the original value under ambient conditions (Fig. S13a and b). The XRD measurements showed that the Tm3+-doped sample structure can remain stable for more than 90 days (Fig. S13c and d). Moreover, the PL performances of Cs2NaInCl6:Sb3+/Tm3+ and Cs2NaInCl6:Te4+/Tm3+ samples were almost unchanged even upon heating at 400 K for 6 h, demonstrating excellent thermal stability, as shown in Fig. S14. These results demonstrated that Tm3+-doped perovskites are promising for NIR LED in advanced night vision detection.


image file: d4qi01772b-f7.tif
Fig. 7 (a) Schematic diagram of the NIR photography device. The LED is illuminated using a portable lamp colorimeter, and a 900 nm filter is installed at the LED light source to filter visible light. (b) Emission spectra of the as-fabricated NIR emitting LED composed of Cs2NaInCl6:5%Sb3+/60%Tm3+ and Cs2NaInCl6:1%Te4+/50%Tm3+ phosphors. (c) Photographs under daylight, in the darkness, and upon illumination with the NIR LED. (d) Vis and NIR images illuminated by fluorescent light and the fabricated NIR LED light.

Conclusions

In summary, Cs2NaInCl6:Sb3+/Tm3+ and Cs2NaInCl6:Te4+/Tm3+ single crystals have been successfully synthesized, which enable efficient NIR-I and NIR-II emissions. Cs2NaInCl6:Sb3+/Tm3+ shows efficient blue emissions at 450 nm, and an NIR-I emission peak at 808 nm and an NIR-II emission peak at 1224 nm under 320 nm excitation, while Cs2NaInCl6:Te4+/Tm3+ exhibits broadband orange emissions at 620 nm, and similar NIR-I and NIR-II emission peaks at 808 and 1224 nm under 420 nm excitation. A high NIR (NIR-I and NIR-II) PLQY of up to 58.0% was obtained in Cs2NaInCl6:Sb3+/Tm3+, while a high NIR PLQY of up to 10.3% was obtained in Cs2NaInCl6:Te4+/Tm3+. The experiments and theoretical calculations reveal the origin of the luminescence as well as demonstrate the possibility of energy transfer. The efficient energy transfer channel design from Sb3+ enables us to realize efficient NIR emissions, and the energy transfer channel from Te4+ enables us to realize long-wavelength low-energy excited NIR emission. The excellent optical performance combined with excellent environmental stability makes Tm3+-doped halide perovskites have a good application in NIR LED and night-vision devices. These findings provide a design strategy to tune the excited state based on different sensitizers, which can achieve efficient infrared emission under different excitation energies for versatile photoelectric applications.

Data availability

The data supporting this article have been included as part of the ESI.

Conflicts of interest

The authors declare no conflict of interest.

Acknowledgements

This work was supported by the University Key Laboratory of Guangdong (2024KSYS021), Universities Special Project in Key Fields of Guangdong (no. 2022ZDZX3027), Natural Science Foundation of Guangdong Province (no. 2022A1515010813), University Engineering Technology Center of Guangdong (no. 2022GCZX007), Inorganic Optical Functional Materials and Application Innovation Team of Guangdong (no. 2023KCXTD033).

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Footnote

Electronic supplementary information (ESI) available: Detailed description of the experimental synthesis, and characterizations; XRD pattern, ultraviolet–visible absorption spectra, PL decay curves, PLE spectra, PL spectra, PLQY, DOS, photoluminescence stability, ICP elemental analysis (PDF). See DOI: https://doi.org/10.1039/d4qi01772b

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