Resistive switching and role of interfaces in memristive devices based on amorphous NbOx grown by anodic oxidation

Giuseppe Leonetti, Matteo Fretto, Katarzyna Bejtka, Elena Sonia Olivetti, Fabrizio Candido Pirri, Natascia De Leo, Ilia Valov and Gianluca Milano

Phys. Chem. Chem. Phys., 2023, 25, 14766
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Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse

Muhammad Ismail, Chandreswar Mahata and Sungjun Kim

Journal of Alloys and Compounds, 2022, 892, 162141
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Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage

Roman Tominov, Vadim Avilov, Zakhar Vakulov, Daniil Khakhulin, Oleg Ageev, Ilia Valov and Vladimir Smirnov

Adv Elect Materials, 2022, 8
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A Generalized Semiempirical Approach to the Modeling of the Optical Band Gap of Ternary Al-(Ga, Nb, Ta, W) Oxides Containing Different Alumina Polymorphs

Francesco Di Quarto, Andrea Zaffora, Francesco Di Franco and Monica Santamaria

Inorg. Chem., 2021, 60, 1419
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Electrolyte-Dependent Modification of Resistive Switching in Anodic Hafnia

Ivana Zrinski, Cezarina Cela Mardare, Luiza-Izabela Jinga, Jan Philipp Kollender, Gabriel Socol, Alexey Minenkov, Achim Walter Hassel and Andrei Ionut Mardare

Nanomaterials, 2021, 11, 666
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Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Somnath S. Kundale, Girish U. Kamble, Pradnya P. Patil, Snehal L. Patil, Kasturi A. Rokade, Atul C. Khot, Kiran A. Nirmal, Rajanish K. Kamat, Kyeong Heon Kim, Ho-Myoung An, Tukaram D. Dongale and Tae Geun Kim

Nanomaterials, 2023, 13, 1879
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Electrochemical surface finishing in miniature—micro and nano electrochemical fabrication for physics and engineering

Galina A. Tsirlina

J Solid State Electrochem, 2025, 29, 1265
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Impact of Electrolyte Incorporation in Anodized Niobium on Its Resistive Switching

Ivana Zrinski, Marvin Löfler, Janez Zavašnik, Claudia Cancellieri, Lars Jeurgens, Achim Hassel and Andrei Mardare

Nanomaterials, 2022, 12, 813
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Influence of electrolyte selection on performance of tantalum anodic oxide memristors

Ivana Zrinski, Alexey Minenkov, Cezarina Cela Mardare, Jan Philipp Kollender, Shaukat Ali Lone, Achim Walter Hassel and Andrei Ionut Mardare

Applied Surface Science, 2021, 565, 150608
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Multilevel resistive switching and synaptic plasticity of nanoparticulated cobaltite oxide memristive device

Tukaram D. Dongale, Atul C. Khot, Ashkan V. Takaloo, Kyung Rock Son and Tae Geun Kim

Journal of Materials Science & Technology, 2021, 78, 81
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Fully hardware-implemented neuromorphic systems using TaO -based memristors

Tian Jin, Kang Lv, Jianzhong Chen, Le Zhang and Xin Guo

Device, 2025, 3, 100645
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Design of defect-chemical properties and device performance in memristive systems

M. Lübben, F. Cüppers, J. Mohr, M. von Witzleben, U. Breuer, R. Waser, C. Neumann and I. Valov

Sci. Adv., 2020, 6
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Stretchable and Wearable Resistive Switching Random‐Access Memory

Qiuwei Shi, Jiangxin Wang, Izzat Aziz and Pooi See Lee

Advanced Intelligent Systems, 2020, 2
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Phosphate incorporation in anodic hafnium oxide memristors

Ivana Zrinski, Cezarina Cela Mardare, Luiza-Izabela Jinga, Jan Philipp Kollender, Gabriel Socol, Achim Walter Hassel and Andrei Ionut Mardare

Applied Surface Science, 2021, 548, 149093
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Interfacial Oxidized Gate Insulators for Low-Power Oxide Thin-Film Transistors

In Hye Kang, Sang Ho Hwang, Young Jo Baek, Seo Gwon Kim, Ye Lin Han, Min Su Kang, Jae Geun Woo, Jong Mo Lee, Eun Seong Yu and Byung Seong Bae

ACS Omega, 2021, 6, 2717
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Composite Memristors by Nanoscale Modification of Hf/Ta Anodic Oxides

Ivana Zrinski, Alexey Minenkov, Cezarina Cela Mardare, Achim Walter Hassel and Andrei Ionut Mardare

J. Phys. Chem. Lett., 2021, 12, 8917
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The Effect of Anodizing Bath Composition on the Electronic Properties of Anodic Ta-Nb Mixed Oxides

Giada Tranchida, Andrea Zaffora, Francesco Di Franco and Monica Santamaria

Nanomaterials, 2022, 12, 4439
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Passivity of Holmium Studied Theoretically by Potential-pH Diagrams for Selection of Electrolytes and Experimental Proof of the Formation of Ultra-Thin Anodic Films

Khurram Shahzad, Jan Philipp Kollender, Cezarina Cela Mardare, Andrei Ionut Mardare and Achim Walter Hassel

J. Electrochem. Soc., 2021, 168, 081509
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Effects of switching layer morphology on resistive switching behavior: A case study of electrochemically synthesized mixed-phase copper oxide memristive devices

Somnath S. Kundale, Akhilesh P. Patil, Snehal L. Patil, Prashant B. Patil, Rajanish K. Kamat, Deok-kee Kim, Tae Geun Kim and Tukaram D. Dongale

Applied Materials Today, 2022, 27, 101460
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Negative differential resistance effect and dual bipolar resistive switching properties in a transparent Ce-based devices with opposite forming polarity

Muhammad Ismail and Sungjun Kim

Applied Surface Science, 2020, 530, 147284
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Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study

Arabinda Barman, Dip Das, Sujit Deshmukh, Pranab Kumar Sarkar, Debosmita Banerjee, René Hübner, Mukul Gupta, Chetan Prakash Saini, Shammi Kumar, Priya Johari, Sankar Dhar and Aloke Kanjilal

ACS Appl. Mater. Interfaces, 2022, 14, 34822
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Mixed anodic oxides for forming-free memristors revealed by combinatorial screening of hafnium-tantalum system

Ivana Zrinski, Alexey Minenkov, Claudia Cancellieri, Roland Hauert, Cezarina Cela Mardare, Jan Philipp Kollender, Lars P.H. Jeurgens, Heiko Groiss, Achim Walter Hassel and Andrei Ionut Mardare

Applied Materials Today, 2022, 26, 101270
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Solution-processed metal oxide dielectric films: Progress and outlook

Won-June Lee, Taehyun Kwak, Jun-Gyu Choi, Sungjun Park and Myung-Han Yoon

APL Materials, 2021, 9
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Core-shell copper nanowire-TiO2 nanotube arrays with excellent bipolar resistive switching properties

Jun Chen, Yulong Wu, Kelin Zhu, Fang Sun, Chungang Guo, Xiaoling Wu, Guoan Cheng and Ruiting Zheng

Electrochimica Acta, 2019, 316, 133
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Memristive Electronic Synapses Made by Anodic Oxidation

Shaochuan Chen, Seyedreza Noori, Marco A. Villena, Yuanyuan Shi, Tingting Han, Ying Zuo, MariaPia Pedeferri, Dmitri Strukov, Mario Lanza and Maria Vittoria Diamanti

Chem. Mater., 2019, 31, 8394
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Optimization of anodizing process of tantalum for Ta2O5-based capacitors

Andrea Zaffora, Francesco Di Franco, Francesco Di Quarto and Monica Santamaria

J Solid State Electrochem, 2020, 24, 2953
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Self‐Assembled Lanthanum Oxide Nanoflakes by Electrodeposition Technique for Resistive Switching Memory and Artificial Synaptic Devices

Pradnya P. Patil, Somnath S. Kundale, Shubham V. Patil, Santosh S. Sutar, Junseong Bae, Sunil J. Kadam, Krantiveer V. More, Prashant B. Patil, Rajanish K. Kamat, Seunghyun Lee and Tukaram D. Dongale

Small, 2023, 19
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Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing

Jinwoong Yang, Hyojong Cho, Hojeong Ryu, Muhammad Ismail, Chandreswar Mahata and Sungjun Kim

ACS Appl. Mater. Interfaces, 2021, 13, 33244
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