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J. Mater. Chem. A, 2022, 10, 6523
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Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities

Klaasjan Maas, Edouard Villepreux, David Cooper, Carmen Jiménez, Hervé Roussel, Laetitia Rapenne, Xavier Mescot, Quentin Rafhay, Michel Boudard and Mónica Burriel

J. Mater. Chem. C, 2020, 8, 464
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Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device

Hojeong Ryu and Sungjun Kim

Nanomaterials, 2020, 10, 2159
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Effect of Oxygen Exchange between Two Oxide Layers of a Memristive Bilayer Valence-Change Memory Cell on the Switching Polarity

Nils Sommer, Regina Dittmann and Stephan Menzel

Phys. Rev. Applied, 2023, 19
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Nanoionic memristive phenomena in metal oxides: the valence change mechanism

Regina Dittmann, Stephan Menzel and Rainer Waser

Advances in Physics, 2021, 70, 155
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Localized Conduction Channels in Memristors

Kyung Seok Woo, R. Stanley Williams and Suhas Kumar

Chem. Rev., 2025, 125, 294
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La2NiO4+δ‐Based Memristive Devices Integrated on Si‐Based Substrates

Thoai‐Khanh Khuu, Gauthier Lefèvre, Carmen Jiménez, Hervé Roussel, Adeel Riaz, Serge Blonkowski, Eric Jalaguier, Ahmad Bsiesy and Mónica Burriel

Adv Materials Technologies, 2022, 7
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Trap‐Assisted Memristive Switching in HfO2‐Based Devices Studied by In Situ Soft and Hard X‐Ray Photoelectron Spectroscopy

Finn Zahari, Richard Marquardt, Matthias Kalläne, Ole Gronenberg, Christoph Schlueter, Yury Matveyev, Georg Haberfehlner, Florian Diekmann, Alena Nierhauve, Jens Buck, Arndt Hanff, Gitanjali Kolhatkar, Gerald Kothleitner, Lorenz Kienle, Martin Ziegler, Jürgen Carstensen, Kai Rossnagel and Hermann Kohlstedt

Adv Elect Materials, 2023, 9
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Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al2O3/TiOx‐Based Memristive Devices

Stephan Aussen, Felix Cüppers, Carsten Funck, Janghyun Jo, Stephan Werner, Christoph Pratsch, Stephan Menzel, Regina Dittmann, Rafal Dunin‐Borkowski, Rainer Waser and Susanne Hoffmann‐Eifert

Adv Elect Materials, 2023, 9
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Operando characterization of interfacial charge transfer processes

Christoph Baeumer

Journal of Applied Physics, 2021, 129
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Ionic control of magnetism in all-solid-state CoOx/yttria-stabilized zirconia heterostructures

Zheng Ma, Zhengwei Tan, Alberto Quintana, Irena Spasojevic, Nicolau López-Pintó, Florencio Sánchez, Ignasi Fina, Javier Herrero-Martín, Enric Menéndez and Jordi Sort

Applied Physics Letters, 2024, 124
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Depth‐Resolved X‐Ray Photoelectron Spectroscopy Evidence of Intrinsic Polar States in HfO2‐Based Ferroelectrics

Megan O. Hill, Ji Soo Kim, Moritz L. Müller, Dibya Phuyal, Sunil Taper, Manisha Bansal, Maximilian T. Becker, Babak Bakhit, Tuhin Maity, Bartomeu Monserrat, Giuliana Di Martino, Nives Strkalj and Judith L. MacManus‐Driscoll

Advanced Materials, 2024, 36
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