Issue 45, 2017

Characterization of Cu2SnS3 polymorphism and its impact on optoelectronic properties

Abstract

Earth abundant compounds are of interest as a possible alternative to more mature thin film based technologies. Cu2SnZnSe4 (CZTS) is the most studied material but its development is impeded by an easy formation of secondary phases, decomposition effects during both synthesis and post process treatments, and formation of Cu–Zn defects resulting in limited device performance. In this context, Cu2SnS3 (CTS) is an interesting substitute with suitable optoelectronic properties and a wider stable composition range with fewer constituents hence (avoiding Zn related defects). Currently the technology is still in an early stage of development with a 4.63% record efficiency (6% with an alloy with Ge) and faces serious issues related to the formation and coexistence of different polymorphic/stoichiometric phases indicating that precise composition control and phase identification are still needed. In this work, an analysis of CTS thin film absorbers is presented. A comparative study by X-ray diffraction profile refinement and Raman spectroscopy allowed the assessment of both cubic and monoclinic CTS phases formed at different annealing temperatures. In addition Raman analysis of precursors sulfurized at different temperatures revealed a blue shift as well as a reduction of the Full Width at Half Maximum (FWHM) of the two dominant peaks for temperatures close to 550 °C, which is interpreted as a CTS phase transition in the absorber layer. This alteration was also correlated with the optoelectronic properties of devices. A higher Voc and Jsc are obtained for samples with 30% monoclinic CTS phase concentration which led to a record efficiency of 2.4%. It is then assumed that higher efficiencies could be achieved for a pure monoclinic CTS layer. In this sense, a non-destructive methodology for the fast evaluation of cubic Cu2SnS3 formation at the surface is proposed.

Graphical abstract: Characterization of Cu2SnS3 polymorphism and its impact on optoelectronic properties

Article information

Article type
Paper
Submitted
02 Dit 2017
Accepted
23 Dit 2017
First published
24 Dit 2017

J. Mater. Chem. A, 2017,5, 23863-23871

Characterization of Cu2SnS3 polymorphism and its impact on optoelectronic properties

F. Oliva, L. Arqués, L. Acebo, M. Guc, Y. Sánchez, X. Alcobé, A. Pérez-Rodríguez, E. Saucedo and V. Izquierdo-Roca, J. Mater. Chem. A, 2017, 5, 23863 DOI: 10.1039/C7TA08705E

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements