Issue 14, 2018

Studies of spin related processes in fullerene C60 devices

Abstract

We have investigated spin related processes in fullerene C60 devices using several experimental techniques, which include magnetic field effect of photocurrent and electroluminescence in C60-based diodes; spin polarized carrier injection in C60-based spin-valves; and pure spin current generation in NiFe/C60/Pt trilayer devices. We found that the ‘curvature-related spin orbit coupling’ in C60 plays a dominant role in the obtained spin-related phenomena. The measured magneto-photocurrent and magneto-electroluminescence responses in C60 diodes are dominated by the difference in the g-values of hole and electron polarons in the fullerene molecules. We also obtained giant magneto-resistance of ∼10% at 10 K in C60 spin-valve devices, where spin polarized holes are injected into the C60 interlayer. In addition, using the technique of spin-pumping in NiFe/C60/Pt trilayer devices with various C60 interlayer thicknesses we determined the spin diffusion length in C60 films to be 13 ± 2 nm at room temperature.

Graphical abstract: Studies of spin related processes in fullerene C60 devices

Supplementary files

Article information

Article type
Paper
Submitted
08 Xim 2017
Accepted
14 Nah 2018
First published
14 Nah 2018

J. Mater. Chem. C, 2018,6, 3621-3627

Studies of spin related processes in fullerene C60 devices

H. Liu, J. Wang, M. Groesbeck, X. Pan, C. Zhang and Z. V. Vardeny, J. Mater. Chem. C, 2018, 6, 3621 DOI: 10.1039/C7TC05086K

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