Issue 25, 2015

The dramatic effect of the annealing temperature and dielectric functionalization on the electron mobility of indene-C60 bis-adduct thin films

Abstract

Herein we report on the charge transport properties of spin-coated thin films of an n-type fullerene derivative, i.e. the indene-C60 bis-adduct (ICBA). In particular, the effects of annealing temperature and duration as well as surface functionalization are explored. Electron mobilities approaching 0.1 cm2 V−1 s−1 are reported.

Graphical abstract: The dramatic effect of the annealing temperature and dielectric functionalization on the electron mobility of indene-C60 bis-adduct thin films

Supplementary files

Article information

Article type
Communication
Submitted
07 Qun 2015
Accepted
06 Nah 2015
First published
06 Nah 2015
This article is Open Access
Creative Commons BY license

Chem. Commun., 2015,51, 5414-5417

Author version available

The dramatic effect of the annealing temperature and dielectric functionalization on the electron mobility of indene-C60 bis-adduct thin films

E. Orgiu, M. A. Squillaci, W. Rekab, K. Börjesson, F. Liscio, L. Zhang and P. Samorì, Chem. Commun., 2015, 51, 5414 DOI: 10.1039/C5CC00151J

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