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Issue 46, 2015
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Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors

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Abstract

We significantly improved the performance of precursor-route semiconducting zinc oxide (ZnO) films in electrolyte-gated thin film transistors (TFTs). We find that the organic precursor to ZnO, zinc acetate (ZnAc), dissolves more readily in a 1 : 1 mixture of ethanol (EtOH) and acetone than in pure EtOH, pure acetone, or pure isopropanol. XPS and SEM characterisation show improved morphology of ZnO films converted from a mixed solvent cast ZnAc precursor compared to the EtOH cast precursor. When gated with a biocompatible electrolyte, phosphate buffered saline (PBS), ZnO thin film transistors (TFTs) derived from mixed solvent cast ZnAc give 4 times larger field effect current than similar films derived from ZnAc cast from pure EtOH. The sheet resistance at VG = VD = 1 V is 30 kΩ □−1, lower than for any organic TFT, and lower than for any electrolyte-gated ZnO TFT reported to date.

Graphical abstract: Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors

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Article information


Submitted
09 Jun 2015
Accepted
26 Oct 2015
First published
26 Oct 2015

Phys. Chem. Chem. Phys., 2015,17, 31247-31252
Article type
Paper

Precursor-route ZnO films from a mixed casting solvent for high performance aqueous electrolyte-gated transistors

T. M. Althagafi, S. A. Algarni, A. Al Naim, J. Mazher and M. Grell, Phys. Chem. Chem. Phys., 2015, 17, 31247
DOI: 10.1039/C5CP03326H

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