Issue 8, 2024

Patterned growth of two-dimensional atomic layer semiconductors

Abstract

Transition metal dichalcogenides (TMDCs), which are representative of two-dimensional (2D) semiconductors, have attracted tremendous attention over the last two decades. TMDCs are regarded as potential candidates in modern nano- and optoelectronic applications due to their unique crystal structures and outstanding electronic and optoelectronic properties. For practical use, 2D semiconductors need to be fabricated with diverse morphologies for integration into electronic devices and to perform different functionalities. Controlled patterning synthesis with programmable geometries is therefore highly desired. We review state-of-the-art strategies for the patterned growth of atomic layer TMDCs and their heterostructures, including additive manufacturing and subtractive manufacturing for patterning single TMDC materials and the introduction of other low-dimensional nanomaterials as growth templates or hetero-atoms for element conversion in patterning TMDC heterostructures. The optoelectronic and electronic applications of the as-grown monolayer TMDC patterns are introduced. Future challenges and the prospects for the patterned growth of 2D semiconductors are discussed based on present achievements.

Graphical abstract: Patterned growth of two-dimensional atomic layer semiconductors

Article information

Article type
Feature Article
Submitted
30 Sep 2023
Accepted
15 Dec 2023
First published
18 Dec 2023

Chem. Commun., 2024,60, 943-955

Patterned growth of two-dimensional atomic layer semiconductors

H. Zhou, C. Zhang, A. Gao, E. Shi and Y. Guo, Chem. Commun., 2024, 60, 943 DOI: 10.1039/D3CC04866G

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