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Issue 12, 2021

Two dimensional CrGa2Se4: a spin-gapless ferromagnetic semiconductor with inclined uniaxial anisotropy

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Abstract

Magnetic semiconductors with high critical temperature have long been the focus in materials science and are also known as one of the fundamental questions in two-dimensional (2D) materials. Based on density functional theory calculations, we predict a 2D spin-gapless ferromagnetic semiconductor of CrGa2Se4 monolayer, in which the type of spin-polarized current can be tuned by tailoring the Fermi energy. Moreover, the magnetic anisotropy energy calculations indicate that the CrGa2Se4 monolayer possesses spin anisotropy both in the basal plane and the vertical plane. This originates from the distortion-induced rearrangement of the 3d electrons in the CrSe6 octahedron and results in an inclined easy axis out of the film. The Curie temperature (Tc) of ferromagnetic phase transition for 2D CrGa2Se4 is more than 200 K. This 2D material shows promising transport properties for spintronics applications and is also important for fundamental research in 2D magnetism.

Graphical abstract: Two dimensional CrGa2Se4: a spin-gapless ferromagnetic semiconductor with inclined uniaxial anisotropy

Supplementary files

Article information


Submitted
20 Nov 2020
Accepted
15 Feb 2021
First published
17 Feb 2021

Nanoscale, 2021,13, 6024-6029
Article type
Communication

Two dimensional CrGa2Se4: a spin-gapless ferromagnetic semiconductor with inclined uniaxial anisotropy

Q. Chen, R. Wang, Z. Huang, S. Yuan, H. Wang, L. Ma and J. Wang, Nanoscale, 2021, 13, 6024 DOI: 10.1039/D0NR08296A

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