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Issue 42, 2020

Flexible low-power source-gated transistors with solution-processed metal–oxide semiconductors

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Abstract

Source-gated transistors (SGTs) with Schottky barriers have emerged as extraordinary candidates for constructing low-power electronics by virtue of device simplicity, high gain, and low operation voltages. In this work, we demonstrate flexible low-power SGTs with solution processed In2O3 channels and Al2O3 gate dielectrics on ultrathin polymer substrates, exhibiting light area density (0.56 mg cm−2), low subthreshold swing (102 mV dec−1), low operation voltage (<2 V), fast saturation behaviors (0.2 V), and low power consumption (46.3 μW cm−2). These achievements pave the way for employing the unconventional SGTs in wearable applications where low-power dissipation and high mechanical flexibility are essential.

Graphical abstract: Flexible low-power source-gated transistors with solution-processed metal–oxide semiconductors

Supplementary files

Article information


Submitted
26 Aug 2020
Accepted
03 Oct 2020
First published
06 Oct 2020

Nanoscale, 2020,12, 21610-21616
Article type
Communication

Flexible low-power source-gated transistors with solution-processed metal–oxide semiconductors

D. Li, M. Zhao, K. Liang, H. Ren, Q. Wu, H. Wang and B. Zhu, Nanoscale, 2020, 12, 21610 DOI: 10.1039/D0NR06177H

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